公开(公告)号：US20230223416A1

公开(公告)日：2023-07-13

申请号：US17572413

申请日：2022-01-10

Applicant: OmniVision Technologies, Inc.

Inventor： Seong Yeol MUN ,  Bill PHAN ,  Duli MAO

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14685 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627

Abstract: A reduced cross-talk pixel-array substrate includes a semiconductor substrate, a buffer layer, a metal annulus, and an attenuation layer. The semiconductor substrate includes a first photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the first photodiode region in a cross-sectional plane parallel to a first back-surface region of the back surface above the first photodiode region. The buffer layer is on the back surface and has a feature located above the first photodiode region with the feature being one of a recess and an aperture. The metal annulus is on the buffer layer and covers the trench. The attenuation layer is above the first photodiode region.

公开(公告)号：US20230215890A1

公开(公告)日：2023-07-06

申请号：US17570006

申请日：2022-01-06

Applicant: OmniVision Technologies, Inc.

Inventor： Seong Yeol MUN ,  Duli MAO ,  Bill PHAN

IPC: H01L27/146 ,  H04N5/3745

CPC classification number: H01L27/1463 ,  H04N5/3745 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689

Abstract: A backside-illuminated image sensor includes arrayed photodiodes separated by isolation structures, and interlayer dielectric between first layer of metal interconnect and substrate. The image sensor has barrier metal walls in the interlayer dielectric between isolation structures and first layer interconnect, the barrier metal walls aligned with the isolation structures and disposed between the isolation structures and first layer interconnect. The barrier metal wall deflects light passing through photodiodes of the sensor that would otherwise be reflected by interconnect into different photodiodes. The sensor is formed by providing a partially fabricated semiconductor substrate with photodiodes and source-drain regions formed; forming gate electrodes on a frontside surface of the semiconductor substrate, depositing an etch-stop layer over the gate electrodes; depositing interlayer dielectric on the etch-stop layer; forming trenches extending to the etch-stop layer through the interlayer dielectric, the trenches being between photodiodes; and filling trenches with metal to form barrier metal walls.

公开(公告)号：US20180226445A1

公开(公告)日：2018-08-09

申请号：US15943651

申请日：2018-04-02

Applicant: OmniVision Technologies, Inc.

Inventor： Chen-Wei LU ,  Dajiang YANG ,  Oray Orkun CELLEK ,  Duli MAO

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/369 ,  H04N5/355 ,  G02B5/20

CPC classification number: H01L27/14621 ,  G02B5/201 ,  G02B5/205 ,  H01L27/14607 ,  H01L27/14685 ,  H04N5/35563 ,  H04N5/3696

Abstract: A method for manufacturing a high-dynamic-range color image sensor includes (a) depositing a color filter layer on a silicon substrate having a photosensitive pixel array with a plurality of first pixels and a plurality of second pixels, to form (i) a plurality of first color filters above a first subset of each of the plurality of first pixels and the plurality of second pixels and (ii) a plurality of second color filters above a second subset of each of the plurality of first pixels and the plurality of second pixels, wherein thickness of the second color filters exceeds thickness of the first color filters, and (b) depositing, on the color filter layer, a dynamic-range extending layer including grey filters above the second pixels to attenuate light propagating toward the second pixels, combined thickness of the color filter layer and the dynamic-range extending layer being uniform across the photosensitive pixel array.

公开(公告)号：US20220190019A1

公开(公告)日：2022-06-16

申请号：US17118252

申请日：2020-12-10

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanliang LIU ,  Bill PHAN ,  Duli MAO ,  Hui ZANG

IPC: H01L27/146

Abstract: A flicker-mitigating pixel-array substrate includes a semiconductor substrate and a metal annulus. The semiconductor substrate includes a small-photodiode region. A back surface of the semiconductor substrate forms a trench surrounding the small-photodiode region in a cross-sectional plane parallel to a back-surface region of the back surface above the small-photodiode region. The metal annulus (i) at least partially fills the trench, (ii) surrounds the small-photodiode region in the cross-sectional plane, and (iii) extends above the back surface. A method for fabricating a flicker-mitigating pixel-array substrate includes forming a metal layer (i) in a trench that surrounds the small-photodiode region in a cross-sectional plane parallel to a back-surface region of the back surface above the small-photodiode region and (ii) on the back-surface region. The method also includes decreasing a thickness of an above-diode section of the metal layer located above the back-surface region.

公开(公告)号：US20180097132A1

公开(公告)日：2018-04-05

申请号：US15285201

申请日：2016-10-04

Applicant: OmniVision Technologies, Inc.

Inventor： Gang CHEN ,  Duli MAO ,  Vincent VENEZIA ,  Dyson H. TAI ,  Bowei ZHANG

IPC: H01L31/0352 ,  H01L31/107 ,  H01L31/02

CPC classification number: H01L31/035272 ,  H01L27/1443 ,  H01L31/02027 ,  H01L31/022408 ,  H01L31/107

Abstract: An avalanche photodiode has a first diffused region of a first diffusion type overlying at least in part a second diffused region of a second diffusion type; and a first minority carrier sink region disposed within the first diffused region, the first minority carrier sink region of the second diffusion type and electrically connected to the first diffused region. In particular embodiments, the first diffusion type is N-type and the second diffusion type is P-type, and the device is biased so that a depletion zone having avalanche multiplication exists between the first and second diffused regions.