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公开(公告)号：US20240327200A1
公开(公告)日：2024-10-03
申请号：US18328624
申请日：2023-06-02
Applicant: Omnitron Sensors
Inventor： Trent Huang
CPC classification number: B81B3/0054 , G02B26/0833 , B81B2201/042
Abstract: A system and method for precisely positioning a moveable structure in a micro-electromechanical system (MEMS). The system includes a substrate and a moveable device structure supported on the substrate. The device structure is moveable from an initial position to a deployment position at a predetermined offset angle to the substrate. A moveable anchor structure is supported on the substrate in proximity to the device structure. The anchor structure is locked to the device structure when the device structure is moved to the deployment position.
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公开(公告)号：US20250110328A1
公开(公告)日：2025-04-03
申请号：US18477316
申请日：2023-09-28
Applicant: Omnitron Sensors
Inventor： Trent Huang , Jia Li , Curtis Ray , Jianing Zhao
Abstract: A dual axis MEMS mirror assembly is disclosed. The assembly has a mirror and two arms, each having a rotational degree of motion and a translational degree of freedom. Each arm is hingedly attached to opposite ends of the mirror. A first pair of actuators is coupled to opposite ends of the first arm. A second pair of actuators is coupled to opposite ends of the second arm. The mirror is rotated around a first axis by the first and second arms when the first and second pair of actuators are rotated in the same angular direction causing the arms to translate in the translational degree of freedom. The mirror is rotated around a second axis by the first and second arms when the first and second pair of actuators are rotated in the opposite angular direction causing the arms to move in the rotational degree of motion.
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公开(公告)号：US20240327206A1
公开(公告)日：2024-10-03
申请号：US18409384
申请日：2024-01-10
Applicant: Omnitron Sensors
Inventor： Trent Huang
IPC: B81C1/00
CPC classification number: B81C1/00301 , B81C2201/0133
Abstract: A system and method for fabricating a micro-electromechanical system (MEMS) device is disclosed. A device layer, a handle layer and a buried oxide layer between the handle layer and the device wafer are formed. A top trench is created in a top surface of the device layer. An oxide layer is created over the top surface of the device layer and the top trench. The top of the device layer and the top trench is coated with a polysilicon layer. The oxide layer of the top trench or the top of the device layer is selectively etched away to create a structure. A bottom trench is created through the handle layer under the structure.
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