公开(公告)号：US20230161503A1

公开(公告)日：2023-05-25

申请号：US17573567

申请日：2022-01-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Sebastien Jean ,  Ming-Jen Liang

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679

Abstract: A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: sending a first operation command sequence to a rewritable non-volatile memory module to instruct a first memory module in the rewritable non-volatile memory module to perform a first operation; obtaining a first time threshold value corresponding to the first operation; updating a first counting value corresponding to the first memory module; and sending a first query command sequence to the rewritable non-volatile memory module to query a status of the first memory module, in response to that the first counting value reaches the first time threshold value.

公开(公告)号：US12236132B2

公开(公告)日：2025-02-25

申请号：US17573567

申请日：2022-01-11

Applicant: PHISON ELECTRONICS CORP.

Inventor： Sebastien Jean ,  Ming-Jen Liang

IPC: G06F3/06

Abstract: A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: sending a first operation command sequence to a rewritable non-volatile memory module to instruct a first memory module in the rewritable non-volatile memory module to perform a first operation; obtaining a first time threshold value corresponding to the first operation; updating a first counting value corresponding to the first memory module; and sending a first query command sequence to the rewritable non-volatile memory module to query a status of the first memory module, in response to that the first counting value reaches the first time threshold value.