公开(公告)号：US20180107083A1

公开(公告)日：2018-04-19

申请号：US15567326

申请日：2016-04-20

Applicant: PI-CRYSTAL INCORPORATION

Inventor： Seiichiro YAMAGUCHI ,  Junichi TAKEYA ,  Masataka ITOH ,  Norikazu SHOMOTO ,  Mina UEMATSU

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32

CPC classification number: G02F1/136286 ,  G02F1/1333 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2001/13613 ,  G09F9/30 ,  H01L27/1259 ,  H01L27/3274 ,  H01L29/786 ,  H01L51/05

Abstract: Active matrix array devices are constituted by devices that have a function such as those of a display/light emitting device, a sensor, a memory or an actuator, and are arranged in a matrix array shape, and the expansion of usage in various fields and applications is expected. However, there is little similarity and compatibility in the forming process and materials between a device such as a display/light emitting device, a sensor, a memory, or an actuator, and a circuit portion that controls such a device in the matrix element, and therefore the device and the circuit portion are mutually restricting factors. This results in an increase in the manufacturing cost and limitation of the function.A conventional active matrix array device is manufactured by performing various process steps on the same substrate. Control circuit portions each including a transistor are formed in some of the process steps. In contrast, the problem described above is solved by forming the control circuit portions of an active matrix array device on a substrate different from that of other portions, and the control circuit portions are respectively mounted on matrix elements in a middle step of the manufacturing process of the matrix array body or after a final step thereof.