公开(公告)号：US20170260622A1

公开(公告)日：2017-09-14

申请号：US15504997

申请日：2015-08-10

Applicant: PLANSEE SE

Inventor： HARALD KOESTENBAUER ,  JUDITH KOESTENBAUER ,  GERHARD LEICHTFRIED ,  JOERG WINKLER ,  MOO SUNG HWANG ,  MARTIN KATHREIN ,  ELISABETH EIDENBERGER

IPC: C23C14/34 ,  C22C27/04 ,  H01B1/02 ,  C22C1/04

CPC classification number: C23C14/3414 ,  C22C1/045 ,  C22C27/04 ,  C23C24/04 ,  H01B1/023 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252

Abstract: A metallization for a thin-film component includes at least one layer composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a metallization includes providing at least one sputtering target, depositing at least one layer of an Mo-based alloy containing Al and Ti and usual impurities, and structuring the metallization by using at least one photolithographic process and at least one subsequent etching step. A sputtering target is composed of an Mo-based alloy containing Al and Ti and usual impurities. A process for producing a sputtering target composed of an Mo-based alloy includes providing a powder mixture containing Mo and also Al and Ti and cold gas spraying (CGS) of the powder mixture onto a suitable support material.