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公开(公告)号:US09784888B2
公开(公告)日:2017-10-10
申请号:US14434697
申请日:2013-10-09
Applicant: Purdue Research Foundation
Inventor: Gururaj Naik , Bivas Saha , Timothy Sands , Vladimir Shalaev , Alexandra Boltasseva
CPC classification number: G02B1/002 , B32B9/00 , B82Y20/00 , G02B5/008 , H01L51/5262 , Y10S977/761 , Y10T428/24975
Abstract: A titanium nitride-based metamaterial, and method for producing the same, is disclosed, consisting of ultrathin, smooth, and alternating layers of a plasmonic titanium nitride (TiN) material and a dielectric material, grown on a substrate to form a superlattice. The dielectric material is made of A1-xScxN, where ‘x’ ranges in value from 0.2 to 0.4. The layers of alternating material have sharp interfaces, and each layer can range from 1-20 nanometers in thickness. Metamaterials based on titanium TiN, a novel plasmonic building block, have many applications including, but not ‘limited to emission enhancers, computer security, etc. The use of nitrogen vacancy centers in diamond, and light emitting diode (LED) efficiency enhancement is of particular interest.
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公开(公告)号:US20150285953A1
公开(公告)日:2015-10-08
申请号:US14434697
申请日:2013-10-09
Applicant: PURDUE RESEARCH FOUNDATION
Inventor: Gururaj Viveka Naik , Bivas Saha , Timothy D. Sands , Vladimir Shalaev , Alexandra Boltasseva
CPC classification number: G02B1/002 , B32B9/00 , B82Y20/00 , G02B5/008 , H01L51/5262 , Y10S977/761 , Y10T428/24975
Abstract: A titanium nitride-based metamaterial, and method for producing the same, is disclosed, consisting of ultrathin, smooth, and alternating layers of a plasmonic titanium nitride (TiN) material and a dielectric material, grown on a substrate to form a superlattice. The dielectric material is made of A1-xScxN, where ‘x’ ranges in value from 0.2 to 0.4. The layers of alternating material have sharp interfaces, and each layer can range from 1-20 nanometers in thickness. Metamaterials based on titanium TiN, a novel plasmonic building block, have many applications including, but not ‘limited to emission enhancers, computer security, etc. The use of nitrogen vacancy centers in diamond, and light emitting diode (LED) efficiency enhancement is of particular interest.
Abstract translation: 公开了一种氮化钛基超材料及其制造方法,其由在衬底上生长以形成超晶格的等离子体氮化钛(TiN)材料和电介质材料的超薄,平滑和交替层组成。 介电材料由A1-xScxN制成,其中'x'的范围为0.2至0.4。 交替材料层具有尖锐的界面,每个层的厚度可以为1-20纳米。 基于钛TiN的超材料,一种新颖的等离子体结构单元,具有许多应用,包括但不限于发射增强剂,计算机安全性等。在金刚石和发光二极管(LED)中使用氮空位中心的效率提高是 特别感兴趣。
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