公开(公告)号：US09630845B2

公开(公告)日：2017-04-25

申请号：US14549878

申请日：2014-11-21

Applicant: Purdue Research Foundation

Inventor： Rakesh Agrawal ,  Bryce Chryst Walker

IPC: C01B19/02 ,  C01B19/00

CPC classification number: C01B19/02 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/64

Abstract: Presented herein is a method for obtaining a dissolved selenium liquid mixture from solid selenium. The method involves mixing an amine solvent and a thiol solvent with the solid selenium to produce a liquid intermediate solution and removing a sulfur containing compound from the liquid intermediate solution to produce a dissolved selenium liquid mixture. A method for obtaining dissolved sulfur liquid mixture by mixing an amine with a thiol to produce a liquid solution that dissolves sulfur to produce a dissolved sulfur liquid mixture is also presented. In addition, a method for obtaining a dissolved sulfur and selenium liquid mixture from solid selenium and solid sulfur by mixing an amine solvent with a thiol solvent is presented.

公开(公告)号：US20160333200A1

公开(公告)日：2016-11-17

申请号：US15219450

申请日：2016-07-26

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Rakesh Agrawal ,  Ruihong Zhang ,  Bryce Chryst Walker ,  Carol Handwerker

IPC: C09D7/12 ,  H01L31/18 ,  H01L31/072 ,  C01B19/00 ,  H01L31/032

CPC classification number: C09D7/63 ,  C01B19/002 ,  C09D7/41 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/1864 ,  Y02E10/50

Abstract: A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.

Abstract translation: 描述了基于溶解元素金属，金属盐，有机金属络合物，金属硫族化物和金属氧化物的通用胺 - 硫醇溶剂混合物的直接溶液方法。 金属含量和金属硫族化物前体可以通过分别，同时或逐步溶解单个或多个金属源，硫属元素和/或金属硫族化合物来制备。 以上述金属硫属元素前体从铜，锌，锡，铟，镓，镉，锗和铅中的至少一种与硫，硒或二者中的至少一种一起获得的多元金属硫族化物以 薄膜，纳米颗粒，油墨等。此外，使用胺 - 硫醇基前体可以实现含金属化合物渗透到多孔结构中。 此外，由于金属源，金属硫族化物和金属氧化物在胺和硫醇的混合物中的可溶性，可以使用该溶剂混合物从系统中除去这些材料。

公开(公告)号：US09862844B2

公开(公告)日：2018-01-09

申请号：US15219450

申请日：2016-07-26

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Rakesh Agrawal ,  Ruihong Zhang ,  Bryce Chryst Walker ,  Carol Handwerker

IPC: B05D5/12 ,  C09D7/12 ,  C01B19/00 ,  H01L21/02 ,  H01L31/032 ,  H01L31/072 ,  H01L31/18

CPC classification number: C09D7/63 ,  C01B19/002 ,  C09D7/41 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/1864 ,  Y02E10/50

Abstract: A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.

公开(公告)号：US20150137039A1

公开(公告)日：2015-05-21

申请号：US14549878

申请日：2014-11-21

Applicant: Purdue Research Foundation

Inventor： Rakesh Agrawal ,  Bryce Chryst Walker

IPC: C01B19/02

CPC classification number: C01B19/02 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/64

Abstract: Presented herein is a method for obtaining a dissolved selenium liquid mixture from solid selenium. The method involves mixing an amine solvent and a thiol solvent with the solid selenium to produce a liquid intermediate solution and removing a sulfur containing compound from the liquid intermediate solution to produce a dissolved selenium liquid mixture. A method for obtaining dissolved sulfur liquid mixture by mixing an amine with a thiol to produce a liquid solution that dissolves sulfur to produce a dissolved sulfur liquid mixture is also presented. In addition, a method for obtaining a dissolved sulfur and selenium liquid mixture from solid selenium and solid sulfur by mixing an amine solvent with a thiol solvent is presented.

Abstract translation: 本文提供的是从固体硒获得溶解的硒液体混合物的方法。 该方法包括用固体硒混合胺溶剂和硫醇溶剂以产生液体中间体溶液并从液体中间体溶液中除去含硫化合物以产生溶解的硒液体混合物。 还提出了通过将胺与硫醇混合以产生溶解硫以产生溶解的硫液体混合物的液体溶液来获得溶解的硫液体混合物的方法。 另外，提出了通过将胺溶剂与硫醇溶剂混合从固体硒和固体硫获得溶解的硫和硒液体混合物的方法。

公开(公告)号：US09738799B2

公开(公告)日：2017-08-22

申请号：US14824913

申请日：2015-08-12

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Rakesh Agrawal ,  Ruihong Zhang ,  Bryce Chryst Walker ,  Carol Handwerker

IPC: B05D5/12 ,  C09D7/12 ,  C01B19/00 ,  H01L21/02 ,  H01L31/032 ,  H01L31/072 ,  H01L31/18

CPC classification number: C09D7/63 ,  C01B19/002 ,  C09D7/41 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/1864 ,  Y02E10/50

Abstract: A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.

公开(公告)号：US20160049542A1

公开(公告)日：2016-02-18

申请号：US14824913

申请日：2015-08-12

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Rakesh Agrawal ,  Ruihong Zhang ,  Bryce Chryst Walker ,  Carol Handwerker

IPC: H01L31/18 ,  C01B19/00 ,  C09D7/12

CPC classification number: C09D7/63 ,  C01B19/002 ,  C09D7/41 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/1864 ,  Y02E10/50

Abstract: A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.