公开(公告)号：US09862844B2

公开(公告)日：2018-01-09

申请号：US15219450

申请日：2016-07-26

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Rakesh Agrawal ,  Ruihong Zhang ,  Bryce Chryst Walker ,  Carol Handwerker

IPC: B05D5/12 ,  C09D7/12 ,  C01B19/00 ,  H01L21/02 ,  H01L31/032 ,  H01L31/072 ,  H01L31/18

CPC classification number: C09D7/63 ,  C01B19/002 ,  C09D7/41 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/1864 ,  Y02E10/50

Abstract: A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.

公开(公告)号：US20160333200A1

公开(公告)日：2016-11-17

申请号：US15219450

申请日：2016-07-26

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Rakesh Agrawal ,  Ruihong Zhang ,  Bryce Chryst Walker ,  Carol Handwerker

IPC: C09D7/12 ,  H01L31/18 ,  H01L31/072 ,  C01B19/00 ,  H01L31/032

CPC classification number: C09D7/63 ,  C01B19/002 ,  C09D7/41 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/1864 ,  Y02E10/50

Abstract: A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.

Abstract translation: 描述了基于溶解元素金属，金属盐，有机金属络合物，金属硫族化物和金属氧化物的通用胺 - 硫醇溶剂混合物的直接溶液方法。 金属含量和金属硫族化物前体可以通过分别，同时或逐步溶解单个或多个金属源，硫属元素和/或金属硫族化合物来制备。 以上述金属硫属元素前体从铜，锌，锡，铟，镓，镉，锗和铅中的至少一种与硫，硒或二者中的至少一种一起获得的多元金属硫族化物以 薄膜，纳米颗粒，油墨等。此外，使用胺 - 硫醇基前体可以实现含金属化合物渗透到多孔结构中。 此外，由于金属源，金属硫族化物和金属氧化物在胺和硫醇的混合物中的可溶性，可以使用该溶剂混合物从系统中除去这些材料。

公开(公告)号：US09738799B2

公开(公告)日：2017-08-22

申请号：US14824913

申请日：2015-08-12

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Rakesh Agrawal ,  Ruihong Zhang ,  Bryce Chryst Walker ,  Carol Handwerker

IPC: B05D5/12 ,  C09D7/12 ,  C01B19/00 ,  H01L21/02 ,  H01L31/032 ,  H01L31/072 ,  H01L31/18

CPC classification number: C09D7/63 ,  C01B19/002 ,  C09D7/41 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/1864 ,  Y02E10/50

Abstract: A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.

公开(公告)号：US20160049542A1

公开(公告)日：2016-02-18

申请号：US14824913

申请日：2015-08-12

Applicant: PURDUE RESEARCH FOUNDATION

Inventor： Rakesh Agrawal ,  Ruihong Zhang ,  Bryce Chryst Walker ,  Carol Handwerker

IPC: H01L31/18 ,  C01B19/00 ,  C09D7/12

CPC classification number: C09D7/63 ,  C01B19/002 ,  C09D7/41 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/1864 ,  Y02E10/50

Abstract: A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.