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    Wearable device with combined sensing capabilities
    1.
    发明授权
    Wearable device with combined sensing capabilities 有权

    公开(公告)号：US10852192B2

    公开(公告)日：2020-12-01

    申请号：US16183727

    申请日：2018-11-07

    Applicant: PixArt Imaging Incorporation

    Inventor： Chih-Ming Sun ,  Ming-Han Tsai

    IPC: G01J5/02 ,  B81B7/02 ,  H04N5/225 ,  B81B7/00 ,  G01J5/14 ,  G01J5/04 ,  G01J5/00

    Abstract: The present invention discloses a wearable device with combined sensing capabilities, which includes a wearable assembly and at least one multi-function sensor module. The wearable assembly is suitable to be worn on a part of a user's body. The wearable assembly includes at least one light-transmissible window. The multi-function sensor module is located inside the wearable assembly, for performing an image sensing function and an infrared temperature sensing function. The multi-function sensor module includes an image sensor module for sensing a physical or a biological feature of an object through the light-transmissible window by way of image sensing; and an infrared temperature sensor module for sensing temperature through the light-transmissible window by way of infrared temperature sensing.

    Semiconductor device and manufacturing method therefor
    2.
    发明授权
    Semiconductor device and manufacturing method therefor 有权

    公开(公告)号：US10283612B2

    公开(公告)日：2019-05-07

    申请号：US15911113

    申请日：2018-03-03

    Applicant: PixArt Imaging Incorporation

    Inventor： Chih-Ming Sun ,  Hsin-Hui Hsu ,  Ming-Han Tsai

    IPC: H01L21/308 ,  H01L21/762 ,  H01L29/51 ,  H01L29/40 ,  H01L29/423

    Abstract: The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.

    WEARABLE DEVICE WITH COMBINED SENSING CAPABILITIES
    3.
    发明申请
    WEARABLE DEVICE WITH COMBINED SENSING CAPABILITIES 有权

    公开(公告)号：US20210041298A1

    公开(公告)日：2021-02-11

    申请号：US17067718

    申请日：2020-10-11

    Applicant: PixArt Imaging Incorporation

    Inventor： Chih-Ming Sun ,  Ming-Han Tsai

    IPC: G01J5/02 ,  B81B7/02 ,  H04N5/225 ,  B81B7/00 ,  G01J5/14 ,  G01J5/04 ,  G01J5/00

    Abstract: The present invention discloses a wearable device with combined sensing capabilities, which includes a wearable assembly and at least one multi-function sensor module. The wearable assembly is suitable to be worn on apart of a user's body. The wearable assembly includes at least one light-transmissible window. The multi-function sensor module is located inside the wearable assembly, for performing an image sensing function and an infrared temperature sensing function. The multi-function sensor module includes an image sensor module for sensing a physical or a biological feature of an object through the light-transmissible window by way of image sensing; and an infrared temperature sensor module for sensing temperature through the light-transmissible window by way of infrared temperature sensing.

    Semiconductor device and manufacturing method therefor
    4.
    发明授权
    Semiconductor device and manufacturing method therefor 有权

    公开(公告)号：US10418458B2

    公开(公告)日：2019-09-17

    申请号：US16357375

    申请日：2019-03-19

    Applicant: PixArt Imaging Incorporation

    Inventor： Chih-Ming Sun ,  Hsin-Hui Hsu ,  Ming-Han Tsai

    IPC: H01L29/51 ,  H01L29/423 ,  H01L29/40 ,  H01L21/308 ,  H01L21/762

    Abstract: The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
    半导体器件及其制造方法

    公开(公告)号：US20160365423A1

    公开(公告)日：2016-12-15

    申请号：US15068573

    申请日：2016-03-12

    Applicant: PixArt Imaging Incorporation

    Inventor： Chih-Ming Sun ,  Hsin-Hui Hsu ,  Ming-Han Tsai

    IPC: H01L29/51 ,  H01L21/308 ,  H01L21/311 ,  H01L29/40 ,  H01L21/762

    CPC classification number: H01L29/518 ,  H01L21/3086 ,  H01L21/76224 ,  H01L29/401 ,  H01L29/42324

    Abstract: The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.

    Abstract translation: 本发明公开了一种半导体器件的制造方法。 该制造方法包括：提供基板; 在所述基板上形成半导体堆叠结构; 在所述半导体堆叠结构上形成层叠的盖层的至少一部分，其中所述堆叠的盖层的所述部分包括氮化物层; 去除所述氮化物层的一部分; 形成堆叠盖层的其余部分; 在所述堆叠的盖层上形成保护层，并且蚀刻所述保护层以形成开口，其中所述氮化物层不被所述开口暴露; 并将蚀刻剂材料引入到所述开口中以蚀刻所述衬底。 本发明还提供了一种通过该方法制造的半导体器件。

    WEARABLE DEVICE WITH COMBINED SENSING CAPABILITIES
    8.
    发明申请
    WEARABLE DEVICE WITH COMBINED SENSING CAPABILITIES 审中-公开

    公开(公告)号：US20190113390A1

    公开(公告)日：2019-04-18

    申请号：US16183727

    申请日：2018-11-07

    Applicant: PixArt Imaging Incorporation

    Inventor： Chih-Ming Sun ,  Ming-Han Tsai

    IPC: G01J5/02 ,  B81B7/00 ,  B81B7/02 ,  H04N5/225

    Abstract: The present invention discloses a wearable device with combined sensing capabilities, which includes a wearable assembly and at least one multi-function sensor module. The wearable assembly is suitable to be worn on a part of a user's body. The wearable assembly includes at least one light-transmissible window. The multi-function sensor module is located inside the wearable assembly, for performing an image sensing function and an infrared temperature sensing function. The multi-function sensor module includes an image sensor module for sensing a physical or a biological feature of an object through the light-transmissible window by way of image sensing; and an infrared temperature sensor module for sensing temperature through the light-transmissible window by way of infrared temperature sensing.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开

    公开(公告)号：US20180190786A1

    公开(公告)日：2018-07-05

    申请号：US15911113

    申请日：2018-03-03

    Applicant: PixArt Imaging Incorporation

    Inventor： Chih-Ming Sun ,  Hsin-Hui Hsu ,  Ming-Han Tsai

    IPC: H01L29/51 ,  H01L29/40 ,  H01L21/308 ,  H01L21/762

    CPC classification number: H01L29/518 ,  H01L21/3086 ,  H01L21/76224 ,  H01L29/401 ,  H01L29/42324

    Abstract: The present invention discloses a manufacturing method for a semiconductor device. The manufacturing method includes: providing a substrate; forming a semiconductor stacked structure on the substrate; forming at least apart of a stacked cap layer on the semiconductor stacked structure, wherein the part of the stacked cap layer includes a nitride layer; removing a part of the nitride layer; forming the rest part of the stacked cap layer; forming a protection layer on the stacked cap layer, and etching the protection layer to form an opening, wherein the nitride layer is not exposed by the opening; and introducing an etchant material into the opening to etch the substrate. The present invention also provides a semiconductor device made by the method.

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