公开(公告)号：US12107190B2

公开(公告)日：2024-10-01

申请号：US17472689

申请日：2021-09-12

Applicant: PlayNitride Display Co., Ltd.

Inventor： Jian-Zhi Chen ,  Pai-Yang Tsai ,  Fei-Hong Chen ,  Yen-Chun Tseng

IPC: H01L33/38 ,  H01L25/075

CPC classification number: H01L33/382 ,  H01L25/0753

Abstract: A micro light-emitting diode including an epitaxy structure, a first pad, a first ohmic contact layer and a current conducting layer is provided. The epitaxy structure includes a first type semiconductor layer, a second type semiconductor layer and an active layer. The first pad is electrically connected to the first type semiconductor layer. The first ohmic contact layer is electrically connected between the first type semiconductor layer and the first pad. The current conducting layer is electrically connected between the first ohmic contact layer and the first pad. At least a portion of the orthogonal projection of the first ohmic contact layer on the plane upon which the first type semiconductor layer is located is away from the orthogonal projection of the first pad on the plane. A display panel is also provided.

公开(公告)号：US12021171B2

公开(公告)日：2024-06-25

申请号：US17211845

申请日：2021-03-25

Applicant: PlayNitride Display Co., Ltd.

Inventor： Tzu-Yang Lin ,  Yen-Chun Tseng ,  Yun-Syuan Chou ,  Fei-Hong Chen ,  Pai-Yang Tsai ,  Jian-Zhi Chen

IPC: H01L33/38 ,  H01L27/15 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L27/156 ,  H01L33/62

Abstract: A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.

公开(公告)号：US20220246798A1

公开(公告)日：2022-08-04

申请号：US17211845

申请日：2021-03-25

Applicant: PlayNitride Display Co., Ltd.

Inventor： Tzu-Yang Lin ,  Yen-Chun Tseng ,  Yun-Syuan Chou ,  Fei-Hong Chen ,  Pai-Yang Tsai ,  Jian-Zhi Chen

IPC: H01L33/38 ,  H01L33/62 ,  H01L27/15

Abstract: A micro light emitting diode including an epitaxy layer, a first pad, a second pad, a first ohmic contact metal, a second ohmic contact metal and at least one etch protection conductive layer is provided. The first pad and the second pad are electrically connected to a first type semiconductor layer and a second type semiconductor layer of the epitaxy layer, respectively. The first ohmic contact metal is disposed between the first type semiconductor layer and the first pad. The second ohmic contact metal is disposed between the second type semiconductor layer and the second pad. The at least one etch protection conductive layer is disposed between the first ohmic contact metal and the first pad and/or between the second ohmic contact metal and the second pad. A display panel is also provided.

公开(公告)号：US20220246799A1

公开(公告)日：2022-08-04

申请号：US17472689

申请日：2021-09-12

Applicant: PlayNitride Display Co., Ltd.

Inventor： Jian-Zhi Chen ,  Pai-Yang Tsai ,  Fei-Hong Chen ,  Yen-Chun Tseng

IPC: H01L33/38

Abstract: A micro light-emitting diode including an epitaxy structure, a first pad, a first ohmic contact layer and a current conducting layer is provided. The epitaxy structure includes a first type semiconductor layer, a second type semiconductor layer and an active layer. The first pad is electrically connected to the first type semiconductor layer. The first ohmic contact layer is electrically connected between the first type semiconductor layer and the first pad. The current conducting layer is electrically connected between the first ohmic contact layer and the first pad. At least a portion of the orthogonal projection of the first ohmic contact layer on the plane upon which the first type semiconductor layer is located is away from the orthogonal projection of the first pad on the plane. A display panel is also provided.