公开(公告)号：US20230343897A1

公开(公告)日：2023-10-26

申请号：US17748049

申请日：2022-05-19

Applicant: PlayNitride Display Co., Ltd.

Inventor： You-Lin Peng ,  Wan-Jung Peng ,  Fei-Hong Chen ,  Pai-Yang Tsai ,  Tzu-Yang Lin

IPC: H01L33/38 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/62

Abstract: A micro light emitting diode structure including an epitaxial structure, an electrode layer and a barrier layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. An orthogonal projection area of the barrier layer on the epitaxial structure is greater than and covers an orthogonal projection area of the electrode layer on the epitaxial structure.

公开(公告)号：US20240113261A1

公开(公告)日：2024-04-04

申请号：US17974560

申请日：2022-10-27

Applicant: PlayNitride Display Co., Ltd.

Inventor： You-Lin Peng ,  Fei-Hong Chen ,  Pai-Yang Tsai ,  Tzu-Yang Lin

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/62

Abstract: A micro light-emitting element including an epitaxial structure, an insulating layer, an electrode structure and a sacrificial layer is provided. The epitaxial structure includes a top surface and a side surface. The insulating layer is disposed on the top surface and the side surface of the epitaxial structure, and the insulating layer includes an opening. The electrode structure is disposed on the top surface of the epitaxial structure and extends through the opening of the insulating layer to be electrically connected to the epitaxial structure. The sacrificial layer is sandwiched between a surface of the insulating layer and the corresponding electrode structure. A micro light-emitting element display device is further provided.

公开(公告)号：US20240413277A1

公开(公告)日：2024-12-12

申请号：US18353114

申请日：2023-07-17

Applicant: PlayNitride Display Co., Ltd.

Inventor： BOON KHOON TEE ,  You-Lin Peng ,  Chee-Yun Low ,  Wan-Jung Peng ,  Pai-Yang Tsai ,  Ching-Liang Lin ,  Fei-Hong Chen

IPC: H01L33/58 ,  H01L33/24 ,  H01L33/38

Abstract: A micro light-emitting device includes an epitaxial structure, a first electrode, a second electrode, a first contact layer and a diffusion structure. The epitaxial structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer stacked in sequence. The second-type semiconductor layer has an outer surface relatively away from the first-type semiconductor layer. The first and second electrodes are respectively disposed on the epitaxial structure and electrically connected to the first-type and the second-type semiconductor layers. The first contact layer is disposed between the first electrode and the first-type semiconductor layer. The diffusion structure is disposed on a side of the second-type semiconductor layer away from the first-type semiconductor layer. A conductivity of the diffusion structure is less than that of the second-type semiconductor layer. The outer surface of the second-type semiconductor layer exposes a lower surface of the diffusion structure away from the first-type semiconductor layer.

公开(公告)号：US20230343898A1

公开(公告)日：2023-10-26

申请号：US17988784

申请日：2022-11-17

Applicant: PlayNitride Display Co., Ltd.

Inventor： You-Lin Peng ,  Wan-Jung Peng ,  Fei-Hong Chen ,  Pai-Yang Tsai ,  Tzu-Yang Lin

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/38

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L33/62

Abstract: A micro light emitting diode structure including an epitaxial structure, an electrode layer, a barrier layer and a bonding layer is provided. The epitaxial structure has a surface. The electrode layer is disposed on the surface of the epitaxial structure. The barrier layer is disposed on the electrode layer. The bonding layer is disposed on the barrier layer and away from the electrode layer.