公开(公告)号：US20040229386A1

公开(公告)日：2004-11-18

申请号：US10767102

申请日：2004-01-29

Applicant: President and Fellows of Harvard College

Inventor： Jene A. Golovchenko ,  Gregor M. Schurmann ,  Gavin M. King ,  Daniel Branton

IPC: H01L021/00 ,  C23C014/00

CPC classification number: G01N33/48721 ,  Y10T436/11 ,  Y10T436/12

Abstract: A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.

Abstract translation: 一种用于控制设置有间隙的导电固态结构中的间隙的方法。 该结构暴露于制造工艺环境条件，其条件被选择以改变间隙的程度。 在将结构暴露于工艺环境期间，跨越间隙施加电压偏置。 在工艺环境暴露期间测量跨越间隙的电子隧道电流，并且基于隧道电流测量在工艺环境暴露期间控制工艺环境。 一种用于控制设置在支撑结构上的导电电极之间的间隙的方法。 每个电极具有通过间隙与其它电极尖端分离的电极头。 电极暴露于离子通量，导致电极的材料传输到相应的电极尖端，将电极的材料局部地添加到间隙中的电极尖端。