公开(公告)号：US12278186B2

公开(公告)日：2025-04-15

申请号：US17681817

申请日：2022-02-27

Applicant: Purdue Research Foundation

Inventor： Zhihong Chen ,  Chun-Li Lo

IPC: H01L23/532 ,  H01L21/768

Abstract: A method of providing a barrier to diffusion of metal into a dielectric in a metal interconnect arrangement is disclosed which includes forming a damascene trench, including forming a dielectric base, with a trench made therein, depositing one or more two dimensional diffusion barrier layers formed over the trench, depositing a conductor layer formed atop the diffusion layer, wherein the one or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base, wherein each of the one or more two-dimensional diffusion barrier layers is a polycrystalline material selected from the group consisting of TaSex, TaTex, TiSx, TiSex, TiTex, and TaSx, and wherein x is between 1.5-1.9.

公开(公告)号：US11289423B2

公开(公告)日：2022-03-29

申请号：US16438093

申请日：2019-06-11

Applicant: Purdue Research Foundation

Inventor： Zhihong Chen ,  Chun-Li Lo

IPC: H01L23/532 ,  H01L21/768

Abstract: A metal interconnect arrangement in an integrated circuit, includes a damascene trench which includes a dielectric base, with a trench made therein, one or more two dimensional diffusion barrier layers formed over the trench, a conductor layer formed atop the diffusion layer, wherein the one or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base.

公开(公告)号：US20220189882A1

公开(公告)日：2022-06-16

申请号：US17681817

申请日：2022-02-27

Applicant: Purdue Research Foundation

Inventor： Zhihong Chen ,  Chun-Li Lo

IPC: H01L23/532 ,  H01L21/768

Abstract: A method of providing a barrier to diffusion of metal into a dielectric in a metal interconnect arrangement is disclosed which includes forming a damascene trench, including forming a dielectric base, with a trench made therein, depositing one or more two dimensional diffusion barrier layers formed over the trench, depositing a conductor layer formed atop the diffusion layer, wherein the one or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base, wherein each of the one or more two-dimensional diffusion barrier layers is a polycrystalline material selected from the group consisting of TaSex, TaTex, TiSx, TiSex, TiTex, and TaSx, and wherein x is between 1.5-1.9.