公开(公告)号：US20240181246A1

公开(公告)日：2024-06-06

申请号：US18441756

申请日：2024-02-14

Applicant: Purdue Research Foundation

Inventor： Hyowon Lee ,  Hyunsu Park ,  Zhihong Chen

IPC: A61N1/05 ,  A61B5/291 ,  A61B5/293 ,  A61N1/04 ,  A61N1/36

CPC classification number: A61N1/0529 ,  A61B5/291 ,  A61B5/293 ,  A61N1/0472 ,  A61N1/36025 ,  A61N1/36082

Abstract: Electronic devices having one or more platinum-based electrodes and methods of producing the same. Such an electronic device includes a platinum-based electrode having a protective layer thereon that includes graphene in an amount effective to reduce platinum corrosion of the electrode.

公开(公告)号：US11289423B2

公开(公告)日：2022-03-29

申请号：US16438093

申请日：2019-06-11

Applicant: Purdue Research Foundation

Inventor： Zhihong Chen ,  Chun-Li Lo

IPC: H01L23/532 ,  H01L21/768

Abstract: A metal interconnect arrangement in an integrated circuit, includes a damascene trench which includes a dielectric base, with a trench made therein, one or more two dimensional diffusion barrier layers formed over the trench, a conductor layer formed atop the diffusion layer, wherein the one or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base.

公开(公告)号：US10151027B2

公开(公告)日：2018-12-11

申请号：US15447065

申请日：2017-03-01

Applicant: Purdue Research Foundation

Inventor： Sunny Chugh ,  Ruchit Mehta ,  Zhihong Chen

IPC: C23C16/26 ,  C23C16/505 ,  C23C16/02 ,  H01J37/32 ,  H01L29/16 ,  C01B32/182 ,  C01B32/186 ,  C01B32/184 ,  H01L21/02

Abstract: A graphene deposition process. The process includes the steps of placing a substrate into a deposition chamber and heating the chamber, generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate.

公开(公告)号：US10604844B2

公开(公告)日：2020-03-31

申请号：US15979309

申请日：2018-05-14

Applicant: Purdue Research Foundation

Inventor： Zhihong Chen ,  Shengjiao Zhang

IPC: C23C16/50 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3213 ,  C23C16/26 ,  C23C16/56 ,  C23F1/14 ,  C23C14/18 ,  C23C14/20 ,  C23C14/58 ,  C23C14/34 ,  C23C14/30

Abstract: A method of growing graphene at low temperature on a substrate. The method includes placing a substrate with a layer of cobalt deposited thereon in a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a carbon precursor gas to the PECVD chamber, generating plasma at between about 350° C. and about 800° C. to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer and enabling a plurality of the carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer, removing carbon atoms from top of the cobalt layer, and removing the cobalt layer.

公开(公告)号：US20170253962A1

公开(公告)日：2017-09-07

申请号：US15447065

申请日：2017-03-01

Applicant: Purdue Research Foundation

Inventor： Sunny Chugh ,  Ruchit Mehta ,  Zhihong Chen

IPC: C23C16/26 ,  C23C16/02 ,  H01L29/16 ,  H01L21/02 ,  H01L21/306 ,  C23C16/505 ,  H01J37/32

CPC classification number: C23C16/26 ,  C01B32/182 ,  C01B32/184 ,  C01B32/186 ,  C23C16/0227 ,  C23C16/505 ,  H01J37/32082 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/0262 ,  H01L29/1608

Abstract: A graphene deposition process. The process includes the steps of placing a substrate into a deposition chamber and heating the chamber, generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate.

公开(公告)号：US20220189882A1

公开(公告)日：2022-06-16

申请号：US17681817

申请日：2022-02-27

Applicant: Purdue Research Foundation

Inventor： Zhihong Chen ,  Chun-Li Lo

IPC: H01L23/532 ,  H01L21/768

Abstract: A method of providing a barrier to diffusion of metal into a dielectric in a metal interconnect arrangement is disclosed which includes forming a damascene trench, including forming a dielectric base, with a trench made therein, depositing one or more two dimensional diffusion barrier layers formed over the trench, depositing a conductor layer formed atop the diffusion layer, wherein the one or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base, wherein each of the one or more two-dimensional diffusion barrier layers is a polycrystalline material selected from the group consisting of TaSex, TaTex, TiSx, TiSex, TiTex, and TaSx, and wherein x is between 1.5-1.9.

公开(公告)号：US20210228864A1

公开(公告)日：2021-07-29

申请号：US17143491

申请日：2021-01-07

Applicant: Purdue Research Foundation

Inventor： Hyowon Lee ,  Hyunsu Park ,  Zhihong Chen

IPC: A61N1/05 ,  H01B13/32 ,  H01B5/00 ,  A61N1/36 ,  A61N1/04

Abstract: Electronic devices having one or more platinum-based electrodes and methods of producing the same. Such an electronic device includes a platinum-based electrode having a protective layer thereon that includes graphene in an amount effective to reduce platinum corrosion of the electrode.

公开(公告)号：US12278186B2

公开(公告)日：2025-04-15

申请号：US17681817

申请日：2022-02-27

Applicant: Purdue Research Foundation

Inventor： Zhihong Chen ,  Chun-Li Lo

IPC: H01L23/532 ,  H01L21/768

Abstract: A method of providing a barrier to diffusion of metal into a dielectric in a metal interconnect arrangement is disclosed which includes forming a damascene trench, including forming a dielectric base, with a trench made therein, depositing one or more two dimensional diffusion barrier layers formed over the trench, depositing a conductor layer formed atop the diffusion layer, wherein the one or more two-dimensional diffusion barrier layers substantially prevent diffusion of constituents of the conductor layer into the dielectric base, wherein each of the one or more two-dimensional diffusion barrier layers is a polycrystalline material selected from the group consisting of TaSex, TaTex, TiSx, TiSex, TiTex, and TaSx, and wherein x is between 1.5-1.9.

公开(公告)号：US11688445B2

公开(公告)日：2023-06-27

申请号：US17588317

申请日：2022-01-30

Applicant: Purdue Research Foundation

Inventor： Sandeep Krishna Thirumala ,  Sumeet Kumar Gupta ,  Yi-Tse Hung ,  Zhihong Chen

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18 ,  H10B61/00 ,  H10N52/80 ,  H10N52/00

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H10B61/00 ,  H10N52/101 ,  H10N52/80

Abstract: A memory cell is disclosed which includes a semiconductor layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another along a first axis and wherein the semiconductor layer extends beyond the first axis along a second axis substantially perpendicular to the first axis, thereby forming a first wing, a third electrode separated from the semiconductor layer by an insulating layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.

公开(公告)号：US20220157359A1

公开(公告)日：2022-05-19

申请号：US17588317

申请日：2022-01-30

Applicant: Purdue Research Foundation

Inventor： Sandeep Krishna Thirumala ,  Sumeet Kumar Gupta ,  Yi-Tse Hung ,  Zhihong Chen

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/04 ,  G11C11/18 ,  H01L43/06

Abstract: A memory cell is disclosed which includes a semiconductor layer, a first electrode coupled to the semiconductor layer, a second electrode coupled to the semiconductor layer, wherein the first and second electrodes are separated from one another along a first axis and wherein the semiconductor layer extends beyond the first axis along a second axis substantially perpendicular to the first axis, thereby forming a first wing, a third electrode separated from the semiconductor layer by an insulating layer, a first magnetic tunnel junction (MTJ) disposed on the first wing, and a first read electrode coupled to the first MTJ.