公开(公告)号：US20220406962A1

公开(公告)日：2022-12-22

申请号：US17845093

申请日：2022-06-21

Applicant: Purdue Research Foundation

Inventor： Xiaohui Xu ,  Zachariah Olson Martin ,  Demid Sychev ,  Alexei S. Lagutchev ,  Yong Chen ,  Vladimir Michael Shalaev ,  Alexandra Boltasseva

IPC: H01L33/02 ,  H01L33/32 ,  H01L33/00 ,  G01Q60/36

Abstract: Methods of fabricating single photon emitters (SPEs) including nanoindentation of hexagonal boron nitride (hBN) host materials and annealing thereof, devices formed from such methods, and chips with a single photon emitter. A substrate with a layer of hBN is provided. Nanoindentation is performed on the layer of hBN to produce an array of sub-micron indentations in the layer of hBN. The layer of hBN is annealed to activate SPEs near the indentations. Devices include a substrate with an SPE produced in accordance with the methods. Chips include a substrate, an hBN layer, and an SPE including an indentation on the hBN layer, in which the substrate is not damaged at the indentation.