System for eliminating substrate bias effect in field effect transistor circuits
    1.
    发明授权
    System for eliminating substrate bias effect in field effect transistor circuits 失效
    用于消除场效应晶体管电路中的衬底偏置效应的系统

    公开(公告)号:US3916430A

    公开(公告)日:1975-10-28

    申请号:US34105873

    申请日:1973-03-14

    Applicant: RCA CORP

    Abstract: An integrated circuit, formed on a common substrate, having one portion operated from a first source of operating potential and another portion operated from a second source of operating potential. Separate wells are diffused in said substrate for the connection thereto of the different voltages and a reference potential common to the two sources of operating potential is applied to the common substrate. Transistors having a given potential applied to their source electrodes are formed in the common substrate or in a well having the same given potential connected thereto for eliminating potential differences between the source and the substrate of the transistors.

    Abstract translation: 形成在公共基板上的集成电路,其具有从第一操作电位操作的一部分和从第二操作电位操作的另一部分。 单独的阱扩散在所述衬底中用于连接到不同电压,并且将两个工作电位源公共的参考电位施加到公共衬底。 具有施加到其源电极的给定电位的晶体管形成在公共衬底或具有与其连接的相同给定电位的阱中,以消除晶体管的源极和衬底之间的电位差。

    Pulse width stabilized monostable multivibrator
    2.
    发明授权
    Pulse width stabilized monostable multivibrator 失效
    脉冲宽度稳定的单稳态激励器

    公开(公告)号:US3578989A

    公开(公告)日:1971-05-18

    申请号:US3578989D

    申请日:1969-06-17

    Applicant: RCA CORP

    CPC classification number: H03K3/355

    Abstract: A monostable multivibrator comprising two cross-coupled inverters having substantially identical threshold voltage levels. Each cross-coupled path includes a charge storage means and there is also included a discharge path for each charge storage means. In response to complementary input signals to the inverters, the multivibrator switches from a first state to a second state and, in response to the first of either charge storage means discharging to the threshold voltage level, the multivibrator switches back to its first state.

    Field-effect transistor circuit for detecting changes in voltage level
    3.
    发明授权
    Field-effect transistor circuit for detecting changes in voltage level 失效
    用于检测电压变化的场效应晶体管电路

    公开(公告)号:US3702943A

    公开(公告)日:1972-11-14

    申请号:US3702943D

    申请日:1971-11-05

    Applicant: RCA CORP

    CPC classification number: H03K5/023 H03K17/145 H03K19/0948

    Abstract: Two field-effect transistors interconnected in such a way that the output voltage produced by the first, which is a function of its voltage threshold, controls the conductivity of the second. One transistor may be reverse biased source-to-substrate to maintain its threshold voltage higher than that of the other. A small change in voltage level may be detected by this circuit by causing that change concurrently to reduce the source-tosubstrate reverse bias of the first transistor and to reverse bias the source-to-substrate of the second transistor.

    Abstract translation: 两个场效应晶体管以这样的方式相互连接,使得由其电压阈值的函数的第一个产生的输出电压控制第二个的电导率。 一个晶体管可以是反向偏置的源到衬底,以使其阈值电压比另一个更高。 该电路可以通过同时引起该变化来降低第一晶体管的源到衬底反向偏置并反向偏置第二晶体管的源极到衬底,可以检测电压电平的小的变化。

    Complementary field-effect transistor buffer circuit
    5.
    发明授权
    Complementary field-effect transistor buffer circuit 失效
    补充场效应晶体管缓存电路

    公开(公告)号:US3591855A

    公开(公告)日:1971-07-06

    申请号:US3591855D

    申请日:1969-04-17

    Applicant: RCA CORP

    CPC classification number: H03K19/018521

    Abstract: A buffer circuit to interface between a complementary fieldeffect transistor (FET) circuit operated at a first voltage level and a load circuit operated at a second voltage level having a lower value than said first voltage level. The buffer includes an input stage and an output stage. The output stage includes two transistors of opposite conductivity connected in parallel to clamp the buffer output point to the positive terminal of the second power supply and a third transistor to clamp the buffer output point to the negative terminal of the second supply. The input stage includes a complementary inverter operated at the first voltage level which in response to output signals from the FET circuit generates complementary signals used to enable either the parallel combination of the two transistors or the third transistor.

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