公开(公告)号：US3916430A

公开(公告)日：1975-10-28

申请号：US34105873

申请日：1973-03-14

Applicant: RCA CORP

Inventor： HEUNER ROBERT CHARLES ,  MORGAN DAVID KEITH ,  STEUDEL GOETZ WOLFGANG

IPC: H01L21/8238 ,  H01L27/02 ,  H01L27/092 ,  H01L29/78 ,  H03K5/02 ,  H03K19/0185 ,  H03K1/00 ,  H03K3/26 ,  H03K3/353

CPC classification number: H01L27/0927 ,  H01L27/0218 ,  H03K5/023 ,  H03K19/018521 ,  Y10S148/038

Abstract: An integrated circuit, formed on a common substrate, having one portion operated from a first source of operating potential and another portion operated from a second source of operating potential. Separate wells are diffused in said substrate for the connection thereto of the different voltages and a reference potential common to the two sources of operating potential is applied to the common substrate. Transistors having a given potential applied to their source electrodes are formed in the common substrate or in a well having the same given potential connected thereto for eliminating potential differences between the source and the substrate of the transistors.

Abstract translation: 形成在公共基板上的集成电路，其具有从第一操作电位操作的一部分和从第二操作电位操作的另一部分。 单独的阱扩散在所述衬底中用于连接到不同电压，并且将两个工作电位源公共的参考电位施加到公共衬底。 具有施加到其源电极的给定电位的晶体管形成在公共衬底或具有与其连接的相同给定电位的阱中，以消除晶体管的源极和衬底之间的电位差。