公开(公告)号：US3478213A

公开(公告)日：1969-11-11

申请号：US3478213D

申请日：1967-09-05

Applicant: RCA CORP

Inventor： SIMON RALPH E ,  WILLIAMS BROWN F ,  WASSERMAN RALPH

IPC: H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J39/12

CPC classification number: H01J1/34 ,  H01J1/308 ,  H01J1/32 ,  H01J2201/3423 ,  Y10S148/051 ,  Y10S148/12

公开(公告)号：US3585430A

公开(公告)日：1971-06-15

申请号：US3585430D

申请日：1968-08-23

Applicant: RCA CORP

Inventor： SIMON RALPH E ,  RODGERS ROBERT L

IPC: H01J29/45 ,  H01L29/00 ,  H01J31/28 ,  H01L15/06

CPC classification number: H01J29/456 ,  H01L29/00

Abstract: A continuous barrier single crystal GaAs1 xPx vidicon target is provided with a thin semi-insulating layer of antimony trisulfide on its scanned side to prevent higher energy beam electrons from traveling through the barrier to a signal plate as dark current.

公开(公告)号：US3699404A

公开(公告)日：1972-10-17

申请号：US3699404D

申请日：1971-02-24

Applicant: RCA CORP

Inventor： SIMON RALPH E ,  WILLIAMS BROWN F

IPC: H01J1/32 ,  H01L15/00

CPC classification number: H01J1/32 ,  Y10S148/119 ,  Y10S148/122 ,  Y10S148/15

Abstract: An electron emitter comprising a body of gallium phosphide having a thin surface layer of cesium. The gallium phosphide is doped with a deep acceptor such as iron. Interaction between the cesium layers and the semiconductor surface results in ionization of the deep acceptor impurities in a small region near the surface. The ionization of deep acceptors at the cesiated surface results in a graded concentration of ionized impurities through the gallium phosphide layer, which establishes an internal electric field for impelling electrons toward the cesiated emitting surface.

Abstract translation: 一种电子发射器，包括具有铯薄表面层的磷化硅体。 磷化镓掺有深受体如铁。 铯层与半导体表面之间的相互作用导致表面附近的小区域内的深受主杂质电离。 在受精表面上的深受体的电离导致通过磷化镓层的离子化杂质的分级浓度，其形成用于将电子推向发光表面的内部电场。