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公开(公告)号：US10295743B2
公开(公告)日：2019-05-21
申请号：US14827779
申请日：2015-08-17
Applicant: Renesas Electronics Corporation
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
Abstract: Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.
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公开(公告)号：US09312327B2
公开(公告)日：2016-04-12
申请号：US14747891
申请日：2015-06-23
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Ken Ozawa , Hiroyuki Kunishima
IPC: H01L27/108 , H01L29/94 , H01L49/02 , H01L27/06 , H01L23/522
CPC classification number: H01L27/10814 , H01L23/5223 , H01L23/5226 , H01L23/53295 , H01L27/0629 , H01L27/10855 , H01L28/87 , H01L28/91 , H01L2924/0002 , H01L2924/00
Abstract: A semiconductor device having a capacitor which includes a first electrode electrically coupled to a transistor and a second electrode separate from the first electrode and covered with an interlayer insulating film, in which a plurality of coupling holes are formed in the interlayer insulating film and are in contact with the second electrode at the lower ends; and, when the capacitance of the second electrode is represented by C [nF] and the total area of the lower ends of the coupling holes is represented by A [μm2], the following expression (1) is satisfied. C/A≦1.98 [nF/μm2] (1) The elution of the second electrode constituting the capacitor at the lower ends of the coupling holes is suppressed.
Abstract translation: 一种具有电容器的半导体器件，包括电耦合到晶体管的第一电极和与第一电极分离并被层间绝缘膜覆盖的第二电极，其中在层间绝缘膜中形成多个耦合孔，并且位于 在下端与第二电极接触; 并且当第二电极的电容由C [nF]表示，并且耦合孔的下端的总面积由A [μm2]表示时，满足以下表达式（1）。 C / A＆nlE; 1.98 [nF /μm2]（1）抑制了在耦合孔的下端构成电容器的第二电极的溶出。
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公开(公告)号：US10151881B2
公开(公告)日：2018-12-11
申请号：US15647838
申请日：2017-07-12
Applicant: Renesas Electronics Corporation
Inventor： Tatsuya Usami , Keiji Sakamoto , Hiroyuki Kunishima
Abstract: A rectangular optical waveguide, an optical phase shifter and an optical modulator each formed of a semiconductor layer are formed on an insulating film constituting an SOI wafer, and then a rear insulating film formed on a rear surface of the SOI wafer is removed. Moreover, a plurality of trenches each having a first depth from an upper surface of the insulating film are formed at a position not overlapping with the rectangular optical waveguide, the optical phase shifter and the optical modulator when seen in a plan view in the insulating film. As a result, since an electric charge can be easily released from the SOI wafer even when the SOI wafer is later mounted on the electrostatic chuck included in the semiconductor manufacturing apparatus, the electric charge is less likely to be accumulated on the rear surface of the SOI wafer.
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公开(公告)号：US09478547B2
公开(公告)日：2016-10-25
申请号：US14729395
申请日：2015-06-03
Applicant: Renesas Electronics Corporation
Inventor： Hiroyuki Kunishima , Masashige Moritoki , Toshiji Taiji , Youichi Yamamoto
IPC: H01L27/04 , H01L27/108
CPC classification number: H01L27/10814 , H01L27/10817 , H01L27/10852
Abstract: Dishing of a plate of a capacitor is suppressed in a structure where the top of the plate is flush with a top of an interconnection. Double interlayer dielectric films are used to form a first recess and a second recess. The second recess has an opening on the bottom of the first recess. The first and second recesses are used to form a capacitor. The lower electrode of the capacitor has a bottom part along the bottom of the first recess. The lower electrode further includes a sidewall part having an upper end that projects along a side face of the second recess from the opening of the second recess up to a position between the opening of the second recess and a top of the upper interlayer dielectric film (the upper one of the double interlayer dielectric films).
Abstract translation: 在板的顶部与互连的顶部齐平的结构中抑制电容器的板的损坏。 双层间绝缘膜用于形成第一凹部和第二凹部。 第二凹部在第一凹部的底部具有开口。 第一和第二凹槽用于形成电容器。 电容器的下电极具有沿着第一凹部的底部的底部。 下电极还包括侧壁部分，其具有从第二凹部的开口沿着第二凹部的侧面突出到第二凹部的开口和上层间电介质膜的顶部之间的位置的上端 双层间绝缘膜中的上层）。
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公开(公告)号：US20160054521A1
公开(公告)日：2016-02-25
申请号：US14827779
申请日：2015-08-17
Applicant: Renesas Electronics Corporation
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
CPC classification number: G02B6/125 , G02B6/136 , G02B2006/12061
Abstract: Disclosed is an optical semiconductor device which can be improved in light shift precision and restrained from undergoing a loss in light transmission. In this device, an inner side-surface of a first optical coupling portion of an optical coupling region and an inner side-surface of a second optical coupling portion of the region are increased in line edge roughness. This manner makes light coupling ease from a first to second optical waveguide. By contrast, the following are decreased in line edge roughness: an outer side-surface of the first optical coupling portion of the optical coupling region; an outer side-surface of the second optical coupling portion of the region; two opposed side-surfaces of a portion of the first optical waveguide, the portion being any portion other than the region; and two opposed side-surfaces of a portion of the second optical waveguide, the portion being any portion other than the region.
Abstract translation: 公开了一种可以提高光偏移精度并且抑制光传输损失的光半导体装置。 在该装置中，光学耦合区域的第一光学耦合部分的内侧表面和该区域的第二光学耦合部分的内侧表面的线边缘粗糙度增加。 这种方式使光耦合容易从第一至第二光波导。 相比之下，线边缘粗糙度降低：光耦合区域的第一光耦合部分的外侧表面; 该区域的第二光耦合部分的外侧表面; 第一光波导的一部分的两个相对的侧表面，该部分是除该区域之外的任何部分; 以及第二光波导的一部分的两个相对的侧表面，该部分是该区域以外的任何部分。
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Patent Agency Ranking
公开(公告)号：US10527872B2
公开(公告)日：2020-01-07
申请号：US15798780
申请日：2017-10-31
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki
Abstract: A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance. Thus, even when the first-layer wiring is formed above the optical directional coupler, the influence of the light reflected by the first-layer wiring on the optical signal propagating through the first optical waveguide and the second optical waveguide of the optical directional coupler can be reduced. Accordingly, the first-layer wiring can be arranged above the optical directional coupler, and the restriction on the layout of the first-layer wiring is relaxed.
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公开(公告)号：US09508662B2
公开(公告)日：2016-11-29
申请号：US14827841
申请日：2015-08-17
Applicant: Renesas Electronics Corporation
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
CPC classification number: H01L23/60 , G02B6/43 , G02F1/0121 , G02F1/025 , G02F2201/12 , G02F2202/105 , H01L31/02002 , H01L2924/0002 , H05K1/0296 , H01L2924/00
Abstract: A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device.In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.
Abstract translation: 在垂直于电信号传输线的延伸方向的横截面中，电信号传输线由屏蔽部分包围，该屏蔽部分包括第一噪声切断布线，第二插塞，第一层布线，第一插塞，屏蔽半导体层 ，第一插头，第一层布线，第二插头和第二噪声切断布线，并且屏蔽部分被固定为参考电位。 因此，屏蔽部分由于影响电信号传输线的来自半导体衬底的磁场或电场的影响而阻塞噪声。
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公开(公告)号：US20160056115A1
公开(公告)日：2016-02-25
申请号：US14827841
申请日：2015-08-17
Applicant: Renesas Electronics Corporation
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki , Ken Ozawa , Tatsuya Usami , Yoshiaki Yamamoto , Keiji Sakamoto
CPC classification number: H01L23/60 , G02B6/43 , G02F1/0121 , G02F1/025 , G02F2201/12 , G02F2202/105 , H01L31/02002 , H01L2924/0002 , H05K1/0296 , H01L2924/00
Abstract: A technique is provided which can prevent the quality of an electrical signal from degrading in an optical semiconductor device.In a cross-section perpendicular to an extending direction of an electrical signal transmission line, the electrical signal transmission line is surrounded by a shielding portion including a first noise cut wiring, second plugs, a first layer wiring, first plugs, a shielding semiconductor layer, first plugs, a first layer wiring, second plugs, and a second noise cut wiring, and the shielding portion is fixed to a reference potential. Thereby, the shielding portion blocks noise due to effects of a magnetic field or an electric field from the semiconductor substrate, which affects the electrical signal transmission line.
Abstract translation: 提供了可以防止电信号在光半导体器件中劣化的技术。 在垂直于电信号传输线的延伸方向的横截面中，电信号传输线由屏蔽部分包围，该屏蔽部分包括第一噪声切断布线，第二插塞，第一层布线，第一插塞，屏蔽半导体层 ，第一插头，第一层布线，第二插头和第二噪声切断布线，并且屏蔽部分被固定为参考电位。 因此，屏蔽部分由于影响电信号传输线的来自半导体衬底的磁场或电场的影响而阻塞噪声。
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公开(公告)号：US09835882B2
公开(公告)日：2017-12-05
申请号：US15152117
申请日：2016-05-11
Applicant: RENESAS ELECTRONICS CORPORATION
Inventor： Hiroyuki Kunishima , Yasutaka Nakashiba , Masaru Wakabayashi , Shinichi Watanuki
CPC classification number: G02F1/025 , G02B6/125 , G02B6/132 , G02B6/2852 , G02B2006/12061 , G02B2006/12142 , G02B2006/12147 , G02F2201/08 , H01L23/53214 , H01L23/53228 , H01L2224/05
Abstract: A low reflectance film with a second reflectance (50% or lower) lower than a first reflectance is formed between an optical directional coupler and a first-layer wiring with the first reflectance. Thus, even when the first-layer wiring is formed above the optical directional coupler, the influence of the light reflected by the first-layer wiring on the optical signal propagating through the first optical waveguide and the second optical waveguide of the optical directional coupler can be reduced. Accordingly, the first-layer wiring can be arranged above the optical directional coupler, and the restriction on the layout of the first-layer wiring is relaxed.
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公开(公告)号：US09739943B2
公开(公告)日：2017-08-22
申请号：US15068547
申请日：2016-03-12
Applicant: Renesas Electronics Corporation
Inventor： Tatsuya Usami , Keiji Sakamoto , Hiroyuki Kunishima
CPC classification number: G02B6/1347 , G02B6/12004 , G02B6/122 , G02B6/136 , G02B2006/12061 , G02B2006/121 , G02F1/025 , H01L23/562
Abstract: A rectangular optical waveguide, an optical phase shifter and an optical modulator each formed of a semiconductor layer are formed on an insulating film constituting an SOI wafer, and then a rear insulating film formed on a rear surface of the SOI wafer is removed. Moreover, a plurality of trenches each having a first depth from an upper surface of the insulating film are formed at a position not overlapping with the rectangular optical waveguide, the optical phase shifter and the optical modulator when seen in a plan view in the insulating film. As a result, since an electric charge can be easily released from the SOI wafer even when the SOI wafer is later mounted on the electrostatic chuck included in the semiconductor manufacturing apparatus, the electric charge is less likely to be accumulated on the rear surface of the SOI wafer.
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