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公开(公告)号：US20150353348A1
公开(公告)日：2015-12-10
申请号：US14718408
申请日：2015-05-21
Applicant: RF Micro Devices, Inc.
Inventor： Jan Edward Vandemeer , Jonathan Hale Hammond
IPC: B81B7/00
CPC classification number: B81B7/0006 , B81B2201/014 , B81B2207/092 , B81B2207/095 , B81B2207/096 , B81C1/00269 , B81C1/00301 , B81C2203/0109 , B81C2203/035 , H01L2224/48137
Abstract: A glass wafer assembly is disclosed. In one aspect, the glass wafer assembly comprises a first glass wafer and a second glass wafer that are bonded by a conductive sealing ring. The conductive sealing ring defines a substantially hermetically sealed cavity between the first glass wafer and the second glass wafer. In another aspect, the first glass wafer and the second glass wafer each comprise a plurality of conductive through glass vias (TGVs). At least one active device is disposed in the substantially hermetically sealed cavity and can be electrically coupled to a conductive TGV in the first glass wafer and a conductive TGV in the second glass wafer to enable flexible electrical routing through the glass wafer assembly without wire bonding and over molding. As a result, it is possible to reduce footprint and height while improving radio frequency (RF) performance of the glass wafer assembly.
Abstract translation: 公开了一种玻璃晶片组件。 在一个方面，玻璃晶片组件包括通过导电密封环结合的第一玻璃晶片和第二玻璃晶片。 导电密封环在第一玻璃晶片和第二玻璃晶片之间限定基本上气密的空腔。 在另一方面，第一玻璃晶片和第二玻璃晶片各自包括多个导电透玻璃通孔（TGV）。 至少一个有源器件设置在基本上气密密封的空腔中，并且可以电耦合到第一玻璃晶片中的导电TGV和第二玻璃晶片中的导电TGV，以使得能够通过玻璃晶片组件的柔性电路径而不引线接合， 超模塑。 结果，可以在改善玻璃晶片组件的射频（RF）性能的同时减小占地面积和高度。
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2.发明申请CONTACT MEMS ARCHITECTURE FOR IMPROVED CYCLE COUNT AND HOT-SWITCHING AND ESD 审中-公开联系MEMS架构改进循环计数和热切换和ESD公开(公告)号：US20140015731A1
公开(公告)日：2014-01-16
申请号：US13939941
申请日：2013-07-11
Applicant: RF Micro Devices, Inc.
Inventor： Nadim Khlat , Jonathan Hale Hammond
CPC classification number: H01H9/548 , H01H1/0036 , H01Q1/50 , H01Q21/0006 , H04B1/44 , Y10T307/747
Abstract: The disclosure is directed to optimized switching circuitry utilizing MEMS (Microelectromechanical Systems) circuitry in series with solid state circuitry. Specifically, the MEMS circuitry includes a first MEMS circuit in parallel with (and separate from) a second MEMS circuit. A paired signal is defined as a transmit signal and a receive signal (in a single band) that are transmitted or received on separate paths or on separate nodes. The transmit signal is associated with the first MEMS circuit, and the receive signal is associated with the second MEMS circuit. The solid state circuitry switches between the first MEMS circuit and second MEMS circuit without requiring any switching in the first or second MEMS circuits.
Abstract translation: 本公开涉及利用与固态电路串联的MEMS（微机电系统）电路的优化开关电路。 具体地，MEMS电路包括与第二MEMS电路并联（并且与第二MEMS电路分离）的第一MEMS电路。 配对信号被定义为在单独的路径上或在单独的节点上发送或接收的发送信号和接收信号（在单个频带中）。 发射信号与第一MEMS电路相关联，并且接收信号与第二MEMS电路相关联。 固态电路在第一MEMS电路和第二MEMS电路之间切换，而不需要在第一或第二MEMS电路中进行任何切换。
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3.发明申请公开(公告)号：US20160027601A1
公开(公告)日：2016-01-28
申请号：US14874704
申请日：2015-10-05
Applicant: RF Micro Devices, Inc.
Inventor： Jonathan Hale Hammond , Julio C. Costa
IPC: H01H49/00
CPC classification number: H01H49/00 , B81B2201/014 , B81C1/0023 , B81C2203/0145 , H01H1/0036 , H01H59/0009
Abstract: Encapsulated MEMS switches are disclosed along with methods of manufacturing the same. A first sacrificial layer is used to form the actuation member of the MEMS switch. A second sacrificial layer is used to form the enclosure that encapsulates the MEMS switch.
Abstract translation: 公开了封装的MEMS开关及其制造方法。 第一牺牲层用于形成MEMS开关的致动构件。 第二牺牲层用于形成封装MEMS开关的外壳。
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Patent Agency Ranking
公开(公告)号：US09859076B2
公开(公告)日：2018-01-02
申请号：US14874704
申请日：2015-10-05
Applicant: RF Micro Devices, Inc.
Inventor： Jonathan Hale Hammond , Julio C. Costa
CPC classification number: H01H49/00 , B81B2201/014 , B81C1/0023 , B81C2203/0145 , H01H1/0036 , H01H59/0009
Abstract: Encapsulated MEMS switches are disclosed along with methods of manufacturing the same. A first sacrificial layer is used to form the actuation member of the MEMS switch. A second sacrificial layer is used to form the enclosure that encapsulates the MEMS switch.
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5.发明申请RADIO FREQUENCY (RF) MICROELECTROMECHANICAL SYSTEMS (MEMS) DEVICES WITH GOLD-DOPED SILICON 有权具有金色硅的无线电频率（RF）微电子系统（MEMS）器件公开(公告)号：US20160023892A1
公开(公告)日：2016-01-28
申请号：US14805774
申请日：2015-07-22
Applicant: RF Micro Devices, Inc.
Inventor： Julio C. Costa , Michael Carroll , Jonathan Hale Hammond
IPC: B81B7/00
CPC classification number: B81B7/0064 , H01H1/0036
Abstract: The present disclosure relates to radio frequency (RF) microelectromechanical system (MEMS) device packaging, and specifically to reducing harmonic distortion caused by such packaging. In one embodiment, a die is provided that employs a gold-doped silicon substrate, wherein at least one RF MEMS device is disposed on the gold-doped silicon substrate. By employing the gold-doped silicon substrate, the packaging can achieve an exceptionally high resistivity without any additional expensive components, wherein the high resistivity has an associated low carrier lifetime. Notably, the low carrier lifetime corresponds to reduced harmonic distortion generated by the gold-doped silicon substrate, even when operating at high power. Thus, the gold-doped silicon substrate provides a less expensive packaging in which to place RF MEMS devices, wherein the packaging is capable of operating at high power with reduced harmonic distortion.
Abstract translation: 本公开涉及射频（RF）微机电系统（MEMS）设备封装，并且具体涉及减少由这种封装引起的谐波失真。 在一个实施例中，提供了一种使用金掺杂硅衬底的管芯，其中至少一个RF MEMS器件设置在掺金硅衬底上。 通过采用金掺杂硅衬底，封装可以实现非常高的电阻率，而没有任何额外的昂贵的组件，其中高电阻率具有相关联的低载流子寿命。 值得注意的是，低载流子寿命对应于由金掺杂硅衬底产生的减少的谐波失真，即使在高功率下操作。 因此，金掺杂硅衬底提供了一种较便宜的封装，其中放置RF MEMS器件，其中封装能够以较低功率运行并减少谐波失真。
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6.发明申请RF FRONT-END CIRCUITRY WITH TRANSISTOR AND MICROELECTROMECHANICAL MULTIPLE THROW SWITCHES 有权具有晶体管和微电子多功能开关的RF前端电路公开(公告)号：US20150303976A1
公开(公告)日：2015-10-22
申请号：US14011802
申请日：2013-08-28
Applicant: RF Micro Devices, Inc.
Inventor： Nadim Khlat , Jonathan Hale Hammond , Marcus Granger-Jones
IPC: H04B1/44
Abstract: This disclosure relates generally to radio frequency (RF) front-end circuitry for routing RF signals to and/or from one or more antennas. Exemplary RF front-end circuitry includes a multiple throw solid-state transistor switch (MTSTS) and a multiple throw microelectromechanical switch (MTMEMS). The MTSTS may be configured to selectively couple a first pole port to any one of a first set of throw ports. The MTMEMS is configured to selectively couple a second pole port to any one of a second set of throw ports. The second pole port of the MTMEMS is coupled to a first throw port in the first set of throw ports of the MTSTS. The MTSTS helps prevent hot switching in the MTMEMS since the first throw port of the MTSTS may be decoupled from the second pole port of the MTMEMS before decoupling the second pole port from a selectively coupled throw port of the MTMEMS.
Abstract translation: 本公开一般涉及用于将RF信号路由到和/或来自一个或多个天线的射频（RF）前端电路。 示例性RF前端电路包括多掷固态晶体管开关（MTSTS）和多掷微机电开关（MTMEMS）。 MTSTS可以被配置为选择性地将第一极端口耦合到第一组投掷端口中的任何一个。 MTMEMS被配置为选择性地将第二极端口耦合到第二组投掷端口中的任何一个。 MTMEMS的第二个极端口连接到MTSTS的第一组丢弃端口中的第一个端口。 MTSTS有助于防止MTMEMS中的热切换，因为在将第二个极端口与MTMEMS的选择性耦合的投掷端口分离之前，MTSTS的第一个端口可以与MTMEMS的第二个极端口分离。
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公开(公告)号：US09688529B2
公开(公告)日：2017-06-27
申请号：US14718408
申请日：2015-05-21
Applicant: RF Micro Devices, Inc.
Inventor： Jan Edward Vandemeer , Jonathan Hale Hammond
CPC classification number: B81B7/0006 , B81B2201/014 , B81B2207/092 , B81B2207/095 , B81B2207/096 , B81C1/00269 , B81C1/00301 , B81C2203/0109 , B81C2203/035 , H01L2224/48137
Abstract: A glass wafer assembly is disclosed. In one aspect, the glass wafer assembly comprises a first glass wafer and a second glass wafer that are bonded by a conductive sealing ring. The conductive sealing ring defines a substantially hermetically sealed cavity between the first glass wafer and the second glass wafer. In another aspect, the first glass wafer and the second glass wafer each comprise a plurality of conductive through glass vias (TGVs). At least one active device is disposed in the substantially hermetically sealed cavity and can be electrically coupled to a conductive TGV in the first glass wafer and a conductive TGV in the second glass wafer to enable flexible electrical routing through the glass wafer assembly without wire bonding and over molding. As a result, it is possible to reduce footprint and height while improving radio frequency (RF) performance of the glass wafer assembly.
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8.发明授权Radio frequency (RF) microelectromechanical systems (MEMS) devices with gold-doped silicon 有权具有掺杂金的硅的射频（RF）微机电系统（MEMS）器件公开(公告)号：US09475692B2
公开(公告)日：2016-10-25
申请号：US14805774
申请日：2015-07-22
Applicant: RF Micro Devices, Inc.
Inventor： Julio C. Costa , Michael Carroll , Jonathan Hale Hammond
CPC classification number: B81B7/0064 , H01H1/0036
Abstract: The present disclosure relates to radio frequency (RF) microelectromechanical system (MEMS) device packaging, and specifically to reducing harmonic distortion caused by such packaging. In one embodiment, a die is provided that employs a gold-doped silicon substrate, wherein at least one RF MEMS device is disposed on the gold-doped silicon substrate. By employing the gold-doped silicon substrate, the packaging can achieve an exceptionally high resistivity without any additional expensive components, wherein the high resistivity has an associated low carrier lifetime. Notably, the low carrier lifetime corresponds to reduced harmonic distortion generated by the gold-doped silicon substrate, even when operating at high power. Thus, the gold-doped silicon substrate provides a less expensive packaging in which to place RF MEMS devices, wherein the packaging is capable of operating at high power with reduced harmonic distortion.
Abstract translation: 本公开涉及射频（RF）微机电系统（MEMS）设备封装，并且具体涉及减少由这种封装引起的谐波失真。 在一个实施例中，提供一种使用金掺杂硅衬底的管芯，其中至少一个RF MEMS器件设置在掺金硅衬底上。 通过采用金掺杂硅衬底，封装可以实现非常高的电阻率，而没有任何额外的昂贵的组件，其中高电阻率具有相关联的低载流子寿命。 值得注意的是，低载流子寿命对应于由金掺杂硅衬底产生的减少的谐波失真，即使在高功率下操作。 因此，金掺杂硅衬底提供了一种较便宜的封装，其中放置RF MEMS器件，其中封装能够以较低功率运行并减少谐波失真。
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