WAVEGUIDE TYPE PHOTODETECTOR AND METHOD OF MANUFACTURE THEREOF

    公开(公告)号:US20210234058A1

    公开(公告)日:2021-07-29

    申请号:US17059088

    申请日:2019-05-29

    Abstract: A silicon based photodetector and method of manufacturing the same. The photodetector comprising: a silicon substrate (201); a buried oxide layer (202), above the silicon substrate; and a waveguide (203), above the buried oxide layer. The waveguide (203) includes a silicon, Si, containing region and a germanium tin, GeSn, containing region (209), both located between a first doped region (206) and a second doped region (207) of the waveguide (203), thereby forming a PIN diode. The first doped region (206) and the second doped region (207) are respectively connected to first and second electrodes (210a, 210b), such that the waveguide (203) is operable as a photodetector.

    OPTICAL COMPONENTS FOR SCANNING LIDAR

    公开(公告)号:US20220128666A1

    公开(公告)日:2022-04-28

    申请号:US17428594

    申请日:2020-02-06

    Abstract: A LiDAR transmitter photonic integrated circuit (PIC) for scanning an environment over a field of view, FOV, the FOV having an azimuthal angular range and a polar angular range, the LiDAR transmitter PIC comprising: a light source for providing light from at least one laser, an optical switch having an input and a plurality of outputs, the optical switch being configured to selectively direct light received at the input to one of the plurality of outputs, and a light emitting component having a plurality of inputs and a plurality of emitters, the light emitting component configured to selectively emit beams over a plurality of emission angles having different respective polar components within the polar angular range of the FOV, wherein the light source is coupled to the input of the optical switch and each of the plurality of outputs of the optical switch is coupled to a respective one of the plurality of inputs of the light emitting component.

    OPTOELECTRONIC DEVICE
    8.
    发明申请

    公开(公告)号:US20220163824A1

    公开(公告)日:2022-05-26

    申请号:US17540782

    申请日:2021-12-02

    Abstract: An optoelectronic device, including: a rib waveguide, the rib waveguide including: a ridge portion, which includes a temperature-sensitive optically active region, and a slab portion, positioned adjacent to the ridge portion; the device further comprising a heater, disposed on top of the slab portion wherein a part of the heater closest to ridge portion is at least 2 μm away from the ridge portion. The device may also have a heater provided with a bottom cladding layer, and may also include various thermal insulation enhancing cavities.

    SPECTROSCOPY SYSTEM WITH BEAT COMPONENT
    9.
    发明申请

    公开(公告)号:US20200333246A1

    公开(公告)日:2020-10-22

    申请号:US16917550

    申请日:2020-06-30

    Abstract: A light ranging and detection system achieving reconfigurable very wide field of view, high sampling of spatial points per second with high optical power handling by using architecture to efficiently combine different wavelengths, time and frequency coding, and spatial selectivity. The transmitter is capable of generating multiple narrow beams, encoding different beams and transmitting in different spatial directions. The receiver can differentiate and extract range and reflectivity information of reflected beams. Three dimensional imaging of the environment is achieved by scanning the field of view of the transmitter. Control and signal processing electronic circuitries fabricated in a chip are packaged together with a chip containing the photonic components of the ranging system. The light ranging and detection system generates a THz beam in addition to an optical beam, and both beams combined allow reconfigurable spectroscopy.

    WAVEGUIDE OPTOELECTRONIC DEVICE
    10.
    发明申请

    公开(公告)号:US20200012043A1

    公开(公告)日:2020-01-09

    申请号:US16465535

    申请日:2017-12-01

    Abstract: A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.

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