公开(公告)号：US09702988B1

公开(公告)日：2017-07-11

申请号：US14989590

申请日：2016-01-06

Applicant: Raytheon Company

Inventor： David R Rhiger ,  Justin Gordon Adams Wehner ,  Kelly Jones ,  Siddhartha Ghosh

IPC: G01T3/08 ,  G01T1/24

CPC classification number: G01T3/08 ,  G01T1/24 ,  G01T1/247

Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria.

公开(公告)号：US20170192113A1

公开(公告)日：2017-07-06

申请号：US14989590

申请日：2016-01-06

Applicant: Raytheon Company

Inventor： David R. Rhiger ,  Justin Gordon Adams Wehner ,  Kelly Jones ,  Siddhartha Ghosh

IPC: G01T3/08 ,  G01T1/24

CPC classification number: G01T3/08 ,  G01T1/24 ,  G01T1/247

Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria.