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公开(公告)号：US20220372651A1
公开(公告)日：2022-11-24
申请号：US17326615
申请日：2021-05-21
Applicant: Raytheon Company
Inventor： Andrew Clarke , David R. Rhiger , George Grama , Stuart B. Farrell
Abstract: An electrical device includes an aluminum nitride passivation layer for a mercury cadmium telluride (Hg1-xCdxTe) (MCT) semiconductor layer of the device. The AlN passivation layer may be an un-textured amorphous-to-polycrystalline film that is deposited onto the surface of the MCT in its as-grown state, or overlying the MCT after the MCT surface has been pre-treated or partially passivated, in this way fully passivating the MCT. The AlN passivation layer may have a coefficient of thermal expansion (CTE) that closely matches the CTE of the MCT layer, thereby reducing strain at an interface to the MCT. The AlN passivation layer may be formed with a neutral inherent (residual) stress, provide mechanical rigidity, and chemical resistance to protect the MCT.
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公开(公告)号：US11851785B2
公开(公告)日：2023-12-26
申请号：US17326615
申请日：2021-05-21
Applicant: Raytheon Company
Inventor： Andrew Clarke , David R. Rhiger , George Grama , Stuart B. Farrell
CPC classification number: C30B25/183 , C30B29/403 , C30B29/605 , H01L31/1832 , H01L31/1868
Abstract: An electrical device includes an aluminum nitride passivation layer for a mercury cadmium telluride (Hg1-xCdxTe) (MCT) semiconductor layer of the device. The AlN passivation layer may be an un-textured amorphous-to-polycrystalline film that is deposited onto the surface of the MCT in its as-grown state, or overlying the MCT after the MCT surface has been pre-treated or partially passivated, in this way fully passivating the MCT. The AlN passivation layer may have a coefficient of thermal expansion (CTE) that closely matches the CTE of the MCT layer, thereby reducing strain at an interface to the MCT. The AlN passivation layer may be formed with a neutral inherent (residual) stress, provide mechanical rigidity, and chemical resistance to protect the MCT.
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公开(公告)号：US20170192113A1
公开(公告)日：2017-07-06
申请号：US14989590
申请日：2016-01-06
Applicant: Raytheon Company
Inventor： David R. Rhiger , Justin Gordon Adams Wehner , Kelly Jones , Siddhartha Ghosh
Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria.
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公开(公告)号：US20230082114A1
公开(公告)日：2023-03-16
申请号：US17475962
申请日：2021-09-15
Applicant: Raytheon Company
Inventor： Andrew Clarke , David R. Rhiger , Chad W. Fulk , Stuart B. Farrell , James Pattison , Jeffrey M. Peterson , Chad M. Althouse
IPC: H01L31/18 , H01L31/0296 , H01L31/0224
Abstract: In one aspect, a method includes forming an electrical path between p-type mercury cadmium telluride and a metal layer. The forming of the electrical path includes depositing a layer of polycrystalline p-type silicon directly on to the p-type mercury cadmium telluride and forming the metal layer on the layer of polycrystalline p-type silicon. In another aspect, an apparatus includes an electrical path. The electrical path includes a p-type mercury cadmium telluride layer, a polycrystalline p-type silicon layer in direct contact with the p-type mercury cadmium telluride layer, a metal silicide in direct contact with the polycrystalline p-type silicon layer, and an electrically conductive metal on the metal silicide. In operation, holes, indicative of electrical current on the electrical path, flow from the p-type mercury cadmium telluride layer to the electrically conductive metal.
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Patent Agency Ranking
公开(公告)号：US11598673B2
公开(公告)日：2023-03-07
申请号：US16953438
申请日：2020-11-20
Applicant: Raytheon Company
Inventor： David R. Rhiger , Edward P. Smith , Jamal I. Mustafa
IPC: G01J5/08 , G01J5/20 , H01L31/101 , H01L31/0304 , H01L31/0352
Abstract: A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.
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公开(公告)号：US11817521B2
公开(公告)日：2023-11-14
申请号：US17475962
申请日：2021-09-15
Applicant: Raytheon Company
Inventor： Andrew Clarke , David R. Rhiger , Chad W. Fulk , Stuart B. Farrell , James Pattison , Jeffrey M. Peterson , Chad M. Althouse
IPC: H01L31/18 , H01L31/0224 , H01L31/0296
CPC classification number: H01L31/1832 , H01L31/02966 , H01L31/022408 , H01L31/1864
Abstract: In one aspect, a method includes forming an electrical path between p-type mercury cadmium telluride and a metal layer. The forming of the electrical path includes depositing a layer of polycrystalline p-type silicon directly on to the p-type mercury cadmium telluride and forming the metal layer on the layer of polycrystalline p-type silicon. In another aspect, an apparatus includes an electrical path. The electrical path includes a p-type mercury cadmium telluride layer, a polycrystalline p-type silicon layer in direct contact with the p-type mercury cadmium telluride layer, a metal silicide in direct contact with the polycrystalline p-type silicon layer, and an electrically conductive metal on the metal silicide. In operation, holes, indicative of electrical current on the electrical path, flow from the p-type mercury cadmium telluride layer to the electrically conductive metal.
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公开(公告)号：US20220163397A1
公开(公告)日：2022-05-26
申请号：US16953438
申请日：2020-11-20
Applicant: Raytheon Company
Inventor： David R. Rhiger , Edward P. Smith , Jamal I. Mustafa
IPC: G01J5/08
Abstract: A sensing element of an infrared detector including a first absorber configured to form a first set of minority carriers upon receipt of an infrared flux, a collector, a first barrier disposed between the first absorber and the collector, a second absorber configured to form a second set of minority carriers upon receipt of the infrared flux, and a second barrier disposed between the second absorber and the collector. In response to a voltage being applied to the collector, the first and second set of minority carriers are collected at the collector.
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公开(公告)号：US09910168B2
公开(公告)日：2018-03-06
申请号：US14270005
申请日：2014-05-05
Applicant: Raytheon Company
Inventor： David R. Rhiger , Kelly A. Jones
Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material bounded by electrodes, and the electrodes include an anode on one side of the semiconductor material and a cathode on the other side of the semiconductor material, includes the following steps: (a) monitoring the electrical signal at each of the anode and the cathode; and (b) comparing the magnitude of the signals at the anode and the cathode, and the transit time difference between the start of the anode signal and the time when the anode signal reaches a maximum, relatively constant value. In the comparing step, predetermined criteria are used to differentiate between gamma-ray events and neutron events.
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公开(公告)号：US20150316662A1
公开(公告)日：2015-11-05
申请号：US14270005
申请日：2014-05-05
Applicant: Raytheon Company
Inventor： David R. Rhiger , Kelly A. Jones
Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material bounded by electrodes, and the electrodes include an anode on one side of the semiconductor material and a cathode on the other side of the semiconductor material, includes the following steps: (a) monitoring the electrical signal at each of the anode and the cathode; and (b) comparing the magnitude of the signals at the anode and the cathode, and the transit time difference between the start of the anode signal and the time when the anode signal reaches a maximum, relatively constant value. In the comparing step, predetermined criteria are used to differentiate between gamma-ray events and neutron events.
Abstract translation: 一种利用公共检测器检测伽马射线事件和中子事件的方法，其中检测器包括由电极限定的半导体材料层，并且电极包括在半导体材料的一侧上的阳极和另一侧的阴极 包括以下步骤：（a）监测每个阳极和阴极处的电信号; 和（b）比较阳极和阴极之间的信号的大小以及阳极信号的起始点和阳极信号达到最大相对恒定值的时间之间的通过时间差。 在比较步骤中，使用预定标准来区分伽马射线事件和中子事件。
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