公开(公告)号：US20170054073A1

公开(公告)日：2017-02-23

申请号：US15243689

申请日：2016-08-22

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Patrick Quarterman ,  Jianxin Zhu

IPC: H01L43/12 ,  H01J37/32 ,  H01L43/10

CPC classification number: H01J37/3244 ,  H01F41/308 ,  H01J37/321 ,  H01J2237/334 ,  H01L21/31144 ,  H01L21/32139 ,  H01L29/82 ,  H01L43/08

Abstract: In some examples, a method including depositing a functional layer over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing, via reactive ion etching with a carrier gas, portions of the functional layer not masked by the hard mask layer, wherein the carrier gas comprises a gas with an atomic number less than an atomic number of argon.

Abstract translation: 在一些实例中，包括在衬底上沉积功能层的方法; 在所述功能层上沉积颗粒层，所述颗粒层包括限定由限定所述多个颗粒的晶界的第二材料分开的多个晶粒的第一材料; 从所述颗粒层中除去所述第二材料，使得所述颗粒层的所述多个颗粒在所述功能层上限定硬掩模层; 并且通过用载气的反应离子蚀刻除去未被硬掩模层掩蔽的功能层的部分，其中载气包括原子序数小于氩原子数的气体。

公开(公告)号：US10347467B2

公开(公告)日：2019-07-09

申请号：US15243689

申请日：2016-08-22

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Patrick Quarterman ,  Jianxin Zhu

IPC: H01F41/30 ,  H01J37/32 ,  H01L29/82 ,  H01L43/08 ,  H01J37/317 ,  H01L21/311 ,  H01L21/3213

Abstract: In some examples, a method including depositing a functional layer over a substrate; depositing a granular layer over the functional layer, the granular layer including a first material defining a plurality of grains separated by a second material defining grain boundaries of the plurality of grains; removing the second material from the granular layer such that the plurality of grains of the granular layer define a hard mask layer on the functional layer; and removing, via reactive ion etching with a carrier gas, portions of the functional layer not masked by the hard mask layer, wherein the carrier gas comprises a gas with an atomic number less than an atomic number of argon.