Patent search ap:("Renesas Electronics America Inc.") AND inv:"Samuel J. ANDERSON" Page 1

1.

发明申请
INSUPERJUNCTION WITH SURROUNDING LIGHTLY DOPED DRAIN REGION 审中-公开

公开(公告)号：US20190165093A1

公开(公告)日：2019-05-30

申请号：US16264336

申请日：2019-01-31

Applicant: Renesas Electronics America Inc.

Inventor： Patrick M. SHEA , Samuel J. ANDERSON , David N. OKADA

IPC: H01L29/06 , H01L29/40 , H01L29/66 , H01L29/78

Abstract: A semiconductor device has a substrate and a lightly doped drain (LDD) region formed in the substrate. A superjunction is formed in the LDD region.

Patent Agency Ranking