公开(公告)号：US20190338444A1

公开(公告)日：2019-11-07

申请号：US16391566

申请日：2019-04-23

Applicant: SHOWA DENKO K.K.

Inventor： Yoshiteru HOSAKA ,  Yohei FUJIKAWA

IPC: C30B35/00 ,  C30B23/06

Abstract: A shielding member includes a plurality of shielding plates, in which the plurality of shielding plates are arranged without gaps therebetween in a plan view from a crystal installation part, and the shielding member is disposed between a source material accommodation part and the crystal installation part, in an apparatus for growing single crystals, wherein the apparatus includes a container for crystal growth that has the source material accommodation part at an inner bottom part, and has the crystal installation part that faces the source material accommodation part, and includes a heating part that is configured to heat the container for crystal growth, in which a single crystal of the source material is grown on a crystal installed in the crystal installation part by subliming the source material from the source material accommodation part.

公开(公告)号：US20200080228A1

公开(公告)日：2020-03-12

申请号：US16559845

申请日：2019-09-04

Applicant: SHOWA DENKO K.K.

Inventor： Yoshiteru HOSAKA

IPC: C30B23/00 ,  C30B23/02 ,  C30B29/36

Abstract: A method of manufacturing a SiC single crystal includes: a storing step of storing a SiC source, which is a powder, in an inner bottom part of a crucible, wherein the crucible is configured to store the SiC source and to attach a seed crystal to a position of the crucible which faces the SiC source; a placing step of placing a porous material on at least a portion of a first surface of the SiC source, wherein the first surface is positioned on a side of the seed crystal; and a crystal growth step of sublimating the SiC source by heating to grow a crystal on the seed crystal, in which the porous material is formed of carbon or a carbide, and the hole diameter of the porous material is smaller than the average particle diameter of the SiC source.