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公开(公告)号：US20190338444A1
公开(公告)日：2019-11-07
申请号：US16391566
申请日：2019-04-23
Applicant: SHOWA DENKO K.K.
Inventor： Yoshiteru HOSAKA , Yohei FUJIKAWA
Abstract: A shielding member includes a plurality of shielding plates, in which the plurality of shielding plates are arranged without gaps therebetween in a plan view from a crystal installation part, and the shielding member is disposed between a source material accommodation part and the crystal installation part, in an apparatus for growing single crystals, wherein the apparatus includes a container for crystal growth that has the source material accommodation part at an inner bottom part, and has the crystal installation part that faces the source material accommodation part, and includes a heating part that is configured to heat the container for crystal growth, in which a single crystal of the source material is grown on a crystal installed in the crystal installation part by subliming the source material from the source material accommodation part.
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公开(公告)号：US20200048793A1
公开(公告)日：2020-02-13
申请号：US16532794
申请日：2019-08-06
Applicant: SHOWA DENKO K.K.
Inventor： Yohei FUJIKAWA
Abstract: This shielding member that is placed between a SiC source loading portion and a crystal installation portion in an apparatus for single crystal growth, wherein the device includes a crystal growth container including the SiC source loading portion which accommodates a SiC source in an inner bottom portion, and the crystal installation portion facing the SiC source loading portion, and a heating unit that is configured to heat the crystal growth container, and the device grows a single crystal of the SiC source on a crystal installed on the crystal installation portion by sublimating the SiC source from the SiC source loading portion; the shielding member includes a plurality of shielding plates, wherein each area of the plurality of shielding plates is 40% or less of a base area of the crystal growth container, and wherein, in a case where the SiC source loading portion is filled with a SiC source, a shielding ratio provided by a projection surface of the plurality of shielding plates, which is projected on an internal circle of the SiC source loading portion at SiC source surface, is 0.5 or more.
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公开(公告)号：US20190301051A1
公开(公告)日：2019-10-03
申请号：US16468413
申请日：2017-12-15
Applicant: SHOWA DENKO K.K.
Inventor： Yohei FUJIKAWA , Hidetaka TAKABA
Abstract: A silicon carbide single crystal is grown by a method comprising: a single crystal growth step of growing a silicon carbide single crystal so as to not close a gap between a side surface of the silicon carbide single crystal growing on a silicon carbide seed crystal, and an inner-side surface of a guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step of terminating crystal growth by temperature lowering; and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, Pin−Pout, between partial pressure Pin of Si2C in a source gas in the vicinity of an inlet of the gap and partial pressure Pout of Si2C in a source gas in the vicinity of an outlet of the gap at 0.18 torr or less.
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4.发明申请公开(公告)号：US20210246572A1
公开(公告)日：2021-08-12
申请号：US17267847
申请日：2019-08-13
Applicant: SHOWA DENKO K.K. , DENSO CORPORATION
Inventor： Shunsuke NOGUCHI , Yohei FUJIKAWA , Hidetaka TAKABA
Abstract: A SiC single crystal, wherein difference between the curving amount of the atomic arrangement surface on the cut surface cut along the direction through the center in plan view and the curving amount of the atomic arrangement surface on the cut surface cut along the direction that passes through the center of view and is perpendicular to the direction is 60 μm or less.
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5.发明申请公开(公告)号：US20210189596A1
公开(公告)日：2021-06-24
申请号：US17267691
申请日：2019-08-13
Applicant: SHOWA DENKO K.K.
Inventor： Shunsuke NOGUCHI , Yohei FUJIKAWA , Hidetaka TAKABA
Abstract: A SiC single crystal, wherein an atomic arrangement surface on the cut surface cut along the direction through the center in plan view and an atomic arrangement surface on the cut surface cut along the direction that passes through the center of the plan view and is perpendicular to the direction are curved in the same direction.
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Patent Agency Ranking
公开(公告)号：US20190194824A1
公开(公告)日：2019-06-27
申请号：US16225848
申请日：2018-12-19
Applicant: SHOWA DENKO K.K.
Inventor： Yohei FUJIKAWA
CPC classification number: C30B29/36 , C30B23/02 , C30B29/605 , C30B29/66 , H01L21/02378 , H01L21/02433
Abstract: A method of processing a SiC single crystal includes a measuring step of measuring a shape of an atomic arrangement plane of the SiC single crystal along at least a first direction passing through a center in plan view and a second direction orthogonal to the first direction; and a surface processing step of processing a first plane serving as an attachment plane of the SiC single crystal, in which the surface processing step includes a grinding step of grinding the first plane, and in the grinding step, a difference is given to a surface state between the first plane and a second plane facing the first plane, and the atomic arrangement plane is flattened by Twyman's effect.
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公开(公告)号：US20210230768A2
公开(公告)日：2021-07-29
申请号：US16468413
申请日：2017-12-15
Applicant: SHOWA DENKO K.K.
Inventor： Yohei FUJIKAWA , Hidetaka TAKABA
Abstract: A method for producing a silicon carbide single crystal according to the present invention is a method for producing a silicon carbide single crystal in which a single crystal of silicon carbide is grown on a silicon carbide seed crystal by using a guide member, the method comprising: a single crystal growth step of growing a silicon carbide single crystal in a manner so as to not close a gap between a side surface of the silicon carbide single crystal growing on the silicon carbide seed crystal, and an inner-side surface of the guide member and a crystal deposited on the inner-side surface of the guide member; a crystal growth termination step of terminating crystal growth by lowering the temperature; and a gap enlargement step, performed between the single crystal growth step and the crystal growth termination step, of enlarging the gap by maintaining a difference, Pin-Pout, between a partial pressure Pin of Si2C in a source gas in the vicinity of an inlet of the gap and a partial pressure Pout of Si2C in a source gas in the vicinity of an outlet of the gap at 0.18 torr or less.
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8.发明申请公开(公告)号：US20200224328A1
公开(公告)日：2020-07-16
申请号：US16734966
申请日：2020-01-06
Applicant: SHOWA DENKO K.K.
Inventor： Yohei FUJIKAWA
Abstract: According to the invention, a SiC single crystal growth crucible includes: a raw material accommodation portion which accommodates a SiC raw material; and a seed crystal support portion which supports a seed crystal disposed on an upper portion of the raw material accommodation portion, in which the raw material accommodation portion has a tapered portion, an inner surface of which is tapered off downward.
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9.发明申请公开(公告)号：US20200080952A1
公开(公告)日：2020-03-12
申请号：US16559746
申请日：2019-09-04
Applicant: SHOWA DENKO K.K.
Inventor： Yohei FUJIKAWA
Abstract: A thermal conductivity measuring device includes a sample container that has a plurality of storage sections; a drive unit that is configured to move the plurality of storage sections of the sample container; and a radiation thermometer that is configured to measure the temperature of a predetermined position of the sample container.
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公开(公告)号：US20200020777A1
公开(公告)日：2020-01-16
申请号：US16471061
申请日：2017-12-22
Applicant: SHOWA DENKO K.K. , DENSO CORPORATION
Inventor： Yohei FUJIKAWA , Hidetaka TAKABA
Abstract: In a SiC wafer, a difference between a threading dislocation density of threading dislocations exposed on a first surface and a threading dislocation density of threading dislocations exposed on a second surface is 10% or less of the threading dislocation density of the surface with a higher threading dislocation density among the first surface and the second surface, and 90% or more of the threading dislocations exposed on the surface with a higher threading dislocation density among the first surface and the second surface extend to the surface with a lower threading dislocation density.
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