公开(公告)号：US3911562A

公开(公告)日：1975-10-14

申请号：US43283974

申请日：1974-01-14

Applicant: SIGNETICS CORP

Inventor： YOUMANS ALBERT PEEPLIS

IPC: H01L21/318 ,  H01L21/321 ,  H01L21/763 ,  H01L23/29 ,  B01J17/00 ,  H01L1/10

CPC classification number: H01L21/763 ,  H01L21/3185 ,  H01L21/321 ,  H01L21/3212 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S438/959 ,  H01L2924/00

Abstract: Method of chemical polishing of planar silicon structures by use of a silicon semiconductor body having planar surfaces with recesses therein opening through the surface. A stop layer is formed on the surface and then the recesses are filled with a filling material. The semiconductor structure with the filled surface is then polished by the use of a polishing pad and applying to the polishing pad a first active chemical agent and applying a second chemical agent to the pad at the same time that the first chemical agent is being applied. The polishing is continued until the stop layer is reached.

Abstract translation: 通过使用具有通过表面开口的具有凹部的平面表面的硅半导体本体对平面硅结构进行化学抛光的方法。 在表面上形成止挡层，然后用填充材料填充凹部。 然后通过使用抛光垫对具有填充表面的半导体结构进行抛光，并将第一活性化学试剂施加到抛光垫上，并在施加第一化学试剂的同时将第二化学试剂施加到焊盘。 继续研磨直到达到止挡层。