公开(公告)号：US20250169154A1

公开(公告)日：2025-05-22

申请号：US18928190

申请日：2024-10-28

Applicant: SK hynix Inc.

Inventor： Kwan Woo DO ,  Hyung Keun KIM ,  Ye Cheon CHO ,  Jae Sang LEE

IPC: H01L29/49 ,  H01L29/423

Abstract: A semiconductor device includes a trench formed in a substrate, a gate insulation layer formed to contact a bottom surface and sidewall surfaces of the trench, a first electrode layer formed to contact the gate insulation layer, the first electrode layer comprising titanium, a second electrode layer formed to contact the first electrode layer, the second electrode layer comprising molybdenum and titanium, and a third electrode layer formed to contact the second electrode layer.