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公开(公告)号:US20170323993A1
公开(公告)日:2017-11-09
申请号:US15522238
申请日:2015-10-27
Applicant: Sol Voltaics AB
Inventor: Mikael BJÖRK , Jonas OHLSSON , Lars SAMUELSON , Erik SAUAR , Ingvar ÅBERG
IPC: H01L31/0687 , H01L31/05 , H01L31/032 , H01L31/0296 , H01L31/028 , H01L31/0224 , H01L31/02 , H01L31/0693 , H01L31/046
CPC classification number: H01L31/0687 , H01L31/0201 , H01L31/022433 , H01L31/02363 , H01L31/028 , H01L31/02966 , H01L31/0322 , H01L31/035227 , H01L31/03529 , H01L31/043 , H01L31/046 , H01L31/0504 , H01L31/0693 , H01L31/0725 , H01L31/078 , Y02E10/544
Abstract: A hybrid photovoltaic device (1) comprising a thin film solar cell (2) disposed in a first layer (21) comprising an array of vertically aligned nanowires (25), said nanowires having a junction with a first band gap corresponding to a first spectral range. The nanowires (25) form absorbing regions, and non-absorbing regions are formed between the nanowires. A bulk solar cell (3) s disposed in a second layer (31), positioned below the first layer (21), having a junction with a second band gap, which is smaller than said first band gap and corresponding to a second spectral range. The nanowires are provided in the first layer with a lateral density selected a such that a predetermined portion of an incident photonic wave-front will pass through the non-absorbing regions without absorption in the first spectral range, into the bulk solar cell for absorption in both the first spectral range and the second spectral range.
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2.
公开(公告)号:US20160155870A1
公开(公告)日:2016-06-02
申请号:US14896369
申请日:2014-06-05
Applicant: SOL VOLTAICS AB
Inventor: Ingvar ÅBERG , Jonas OHLSSON , Damir ASOLI , Nicklas ANTTU
IPC: H01L31/0352 , H01L31/18 , H01L31/0735 , H01L31/0224 , H01L31/0216
CPC classification number: H01L31/035281 , H01L31/02167 , H01L31/022466 , H01L31/035227 , H01L31/0693 , H01L31/0735 , H01L31/075 , H01L31/1852 , H01L31/1868 , H01L31/1884 , Y02E10/544 , Y02E10/548
Abstract: A solar cell structure (1) and a method of its fabrication, the structure comprising an array of elongated nanowires (2) made in a semiconductor material having a direct band gap. Each nanowire (2) has at least a first (3) and a second (4) sections. Said structure comprises a first electrode layer (7) realizing ohmic contact to at least one portion of each first section (3), a second, optically transparent electrode layer (8) realizing contact to at least one portion of each second section. Each nanowire (2) comprises a minority carrier barrier element (6) for minimizing recombination of minority carriers at the contact to the second electrode layer (8).
Abstract translation: 一种太阳能电池结构(1)及其制造方法,该结构包括由具有直接带隙的半导体材料制成的细长纳米线阵列(2)。 每个纳米线(2)至少具有第一(3)和第二(4)部分。 所述结构包括实现与每个第一部分(3)的至少一部分欧姆接触的第一电极层(7),实现与每个第二部分的至少一部分接触的第二光学透明电极层(8)。 每个纳米线(2)包括用于最小化与第二电极层(8)的接触处的少数载流子的复合的少数载流子势垒元件(6)。
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