公开(公告)号：US20240047504A1

公开(公告)日：2024-02-08

申请号：US18467364

申请日：2023-09-14

Applicant: SONY GROUP CORPORATION

Inventor： Taiichiro WATANABE ,  Akihiro YAMADA ,  Hideo KIDO ,  Hiromasa SAITO ,  Keiji MABUCHI ,  Yuko OHGISHI

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14887 ,  H01L27/14603 ,  H01L27/14647 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14625 ,  H01L27/14656

Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; a plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.