公开(公告)号：US20240047504A1

公开(公告)日：2024-02-08

申请号：US18467364

申请日：2023-09-14

Applicant: SONY GROUP CORPORATION

Inventor： Taiichiro WATANABE ,  Akihiro YAMADA ,  Hideo KIDO ,  Hiromasa SAITO ,  Keiji MABUCHI ,  Yuko OHGISHI

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14887 ,  H01L27/14603 ,  H01L27/14647 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14625 ,  H01L27/14656

Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; a plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

公开(公告)号：US20240387602A1

公开(公告)日：2024-11-21

申请号：US18612552

申请日：2024-03-21

Applicant: SONY GROUP CORPORATION

Inventor： Hideaki TOGASHI ,  Fumihiko KOGA ,  Tetsuji YAMAGUCHI ,  Shintarou HIRATA ,  Taiichiro WATANABE ,  Yoshihiro ANDO ,  Toyotaka KATAOKA ,  Satoshi KEINO ,  Yukio KANEDA

IPC: H01L27/148 ,  H01L27/146 ,  H10K30/30 ,  H10K30/82 ,  H10K39/32

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

公开(公告)号：US20220336521A1

公开(公告)日：2022-10-20

申请号：US17733809

申请日：2022-04-29

Applicant: SONY GROUP CORPORATION

Inventor： Hideaki TOGASHI ,  Fumihiko KOGA ,  Tetsuji YAMAGUCHI ,  Shintarou HIRATA ,  Taiichiro WATANABE ,  Yoshihiro ANDO ,  Toyotaka KATAOKA ,  Satoshi KEINO ,  Yukio KANEDA

IPC: H01L27/148 ,  H01L27/30 ,  H01L27/146 ,  H01L51/42 ,  H01L51/44

Abstract: An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

公开(公告)号：US20240047490A1

公开(公告)日：2024-02-08

申请号：US18490465

申请日：2023-10-19

Applicant: SONY GROUP CORPORATION

Inventor： Ryosuke NAKAMURA ,  Fumihiko KOGA ,  Taiichiro WATANABE

IPC: H01L27/146 ,  G01J1/44

CPC classification number: H01L27/14614 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14638 ,  H01L27/1464 ,  G01J1/44 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1461 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14647 ,  G01J2001/448

Abstract: There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.

公开(公告)号：US20220352222A1

公开(公告)日：2022-11-03

申请号：US17751331

申请日：2022-05-23

Applicant: SONY GROUP CORPORATION

Inventor： Ryosuke NAKAMURA ,  Fumihiko KOGA ,  Taiichiro WATANABE

IPC: H01L27/146 ,  G01J1/44

Abstract: There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.