公开(公告)号：US10465112B2

公开(公告)日：2019-11-05

申请号：US15844712

申请日：2017-12-18

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk Lee ,  Jae Wan Park ,  Jung Hun Lim

IPC: C09K13/06 ,  H01L21/02 ,  H01L21/311 ,  H01L29/66 ,  H01L27/11556

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US09868902B2

公开(公告)日：2018-01-16

申请号：US14797050

申请日：2015-07-10

Applicant: Soulbrain Co., Ltd.

Inventor： Jin Uk Lee ,  Jae Wan Park ,  Jung Hun Lim

IPC: C09K13/06 ,  H01L21/311 ,  H01L29/66 ,  H01L27/11556

CPC classification number: C09K13/06 ,  H01L21/31111 ,  H01L27/11556 ,  H01L29/66825

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US11530355B2

公开(公告)日：2022-12-20

申请号：US17093654

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun Lim ,  Jin Uk Lee ,  Jae Wan Park

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311 ,  C09K13/04

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US11634634B2

公开(公告)日：2023-04-25

申请号：US17087636

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk Lee ,  Jae Wan Park ,  Jung Hun Lim

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US11566178B2

公开(公告)日：2023-01-31

申请号：US17093658

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun Lim ,  Jin Uk Lee ,  Jae Wan Park

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311 ,  C09K13/04

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US11466207B2

公开(公告)日：2022-10-11

申请号：US17087626

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk Lee ,  Jae Wan Park ,  Jung Hun Lim

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US11421156B2

公开(公告)日：2022-08-23

申请号：US17093650

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun Lim ,  Jin Uk Lee ,  Jae Wan Park

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311 ,  C09K13/04

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US11365352B2

公开(公告)日：2022-06-21

申请号：US17087635

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk Lee ,  Jae Wan Park ,  Jung Hun Lim

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.

公开(公告)号：US11149200B2

公开(公告)日：2021-10-19

申请号：US15781471

申请日：2016-10-28

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun Lim ,  Jin Uk Lee ,  Jae Wan Park

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311 ,  C09K13/04

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US11634633B2

公开(公告)日：2023-04-25

申请号：US17087633

申请日：2020-11-03

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk Lee ,  Jae Wan Park ,  Jung Hun Lim

IPC: C09K13/06 ,  H01L21/02 ,  H01L29/66 ,  H01L27/11556 ,  H01L21/311

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.