公开(公告)号：US20210079266A1

公开(公告)日：2021-03-18

申请号：US17090909

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan PARK ,  Jung-Hun LIM ,  Jin-Uk LEE

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/311

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20190136090A1

公开(公告)日：2019-05-09

申请号：US16228780

申请日：2018-12-21

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan PARK ,  Jung-Hun LIM ,  Jin-Uk LEE

IPC: C09G1/04 ,  H01L21/3105

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20210054238A1

公开(公告)日：2021-02-25

申请号：US17090910

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan PARK ,  Jung-Hun LIM ,  Jin-Uk LEE

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/311

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20210054234A1

公开(公告)日：2021-02-25

申请号：US17090897

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan PARK ,  Jung-Hun LIM ,  Jin-Uk LEE

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/311

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20250026962A1

公开(公告)日：2025-01-23

申请号：US18898703

申请日：2024-09-27

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan PARK ,  Jung-Hun LIM ,  Jin-Uk LEE

IPC: C09G1/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H10B43/27 ,  H10B43/35

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20210054237A1

公开(公告)日：2021-02-25

申请号：US17090905

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan PARK ,  Jung-Hun LIM ,  Jin-Uk LEE

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/311

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20210054236A1

公开(公告)日：2021-02-25

申请号：US17090904

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan PARK ,  Jung-Hun LIM ,  Jin-Uk LEE

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/311

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20210054235A1

公开(公告)日：2021-02-25

申请号：US17090901

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan PARK ,  Jung-Hun LIM ,  Jin-Uk LEE

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/311

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.