公开(公告)号：US11512226B2

公开(公告)日：2022-11-29

申请号：US17090901

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan Park ,  Jung-Hun Lim ,  Jin-Uk Lee

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/311 ,  H01L21/762

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20130157427A1

公开(公告)日：2013-06-20

申请号：US13708362

申请日：2012-12-07

Applicant: SK hynix Inc. ,  Soulbrain Co., Ltd.

Inventor： Sung-Hyuk Cho ,  Kwon Hong ,  Hyung-Soon Park ,  Gyu-Hyun Kim ,  Ji-Hye Han ,  Jung-Hun Lim ,  Jin-Uk Lee ,  Jae-Wan Park ,  Chan-Keun Jung

IPC: H01L21/306 ,  H01L29/66

CPC classification number: H01L21/30604 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66136 ,  H01L29/66666 ,  H01L29/861

Abstract: The present invention provides an etching composition, comprising a silyl phosphate compound, phosphoric acid and deionized water, and a method for fabricating a semiconductor, which includes an etching process employing the etching composition. The etching composition of the invention shows a high etching selectivity for a nitride film with respect to an oxide film. Thus, when the etching composition of the present invention is used to remove a nitride film, the effective field oxide height (EEH) may be easily controlled by controlling the etch rate of the oxide film. In addition, the deterioration in electrical characteristics caused by damage to an oxide film or etching of the oxide film may be prevented, and particle generation may be prevented, thereby ensuring the stability and reliability of the etching process.

Abstract translation: 本发明提供一种蚀刻组合物，其包含磷酸甲硅烷基化合物，磷酸和去离子水，以及包括使用该蚀刻组合物的蚀刻工艺的半导体制造方法。 本发明的蚀刻组合物显示出相对于氧化膜对氮化膜的高蚀刻选择性。 因此，当使用本发明的蚀刻组合物去除氮化物膜时，可以通过控制氧化膜的蚀刻速率来容易地控制有效场氧化物高度（EEH）。 此外，可以防止由氧化膜的损坏引起的电特性的恶化或氧化膜的蚀刻，并且可以防止颗粒的产生，从而确保蚀刻工艺的稳定性和可靠性。

公开(公告)号：US12163058B2

公开(公告)日：2024-12-10

申请号：US17090897

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan Park ,  Jung-Hun Lim ,  Jin-Uk Lee

IPC: H01L21/02 ,  C09G1/04 ,  H01L21/3105 ,  H01L21/311 ,  H10B43/27 ,  H10B43/35 ,  H01L21/762

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US11912902B2

公开(公告)日：2024-02-27

申请号：US16228780

申请日：2018-12-21

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan Park ,  Jung-Hun Lim ,  Jin-Uk Lee

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/311 ,  H10B43/27 ,  H10B43/35 ,  H01L21/762

CPC classification number: C09G1/04 ,  H01L21/02458 ,  H01L21/31056 ,  H01L21/31111 ,  H10B43/27 ,  H10B43/35 ,  H01L21/76224

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US11414569B2

公开(公告)日：2022-08-16

申请号：US17090905

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan Park ,  Jung-Hun Lim ,  Jin-Uk Lee

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/311 ,  H01L21/762

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US09530670B2

公开(公告)日：2016-12-27

申请号：US14492122

申请日：2014-09-22

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoon Han ,  Byoung-Moon Yoon ,  Young-Taek Hong ,  Keon-Young Kim ,  Jun-Youl Yang ,  Young-Ok Kim ,  Tae-Heon Kim ,  Sun-Joong Song ,  Jung-Hun Lim ,  Jae-Wan Park ,  Jin-Uk Lee

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/3213 ,  H01L29/423 ,  C09K13/04 ,  C23F1/26 ,  H01L21/321 ,  H01L27/115 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/32133 ,  C09K13/04 ,  C23F1/26 ,  H01L21/32115 ,  H01L21/32134 ,  H01L27/11582 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/66666 ,  H01L29/7827

Abstract: The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.

Abstract translation: 本公开内容涉及形成导电图案的方法以及使用其形成半导体器件的方法。 在一些实施例中，形成导电图案的方法包括在衬底上形成第一导电层和第二导电层。 第一导电层和第二导电层可以分别包括金属氮化物和金属。 可以使用包括磷酸，硝酸，辅助氧化剂和剩余的水的蚀刻剂组合物来蚀刻第一导电层和第二导电层。 蚀刻剂组合物可以具有与金属氮化物和金属基本相同的蚀刻速率。

公开(公告)号：US12146076B2

公开(公告)日：2024-11-19

申请号：US17090909

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan Park ,  Jung-Hun Lim ,  Jin-Uk Lee

IPC: H01L21/02 ,  C09G1/04 ,  G09G1/04 ,  H01L21/3105 ,  H01L21/311 ,  H10B43/27 ,  H10B43/35 ,  H01L21/762

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US12012525B2

公开(公告)日：2024-06-18

申请号：US17090904

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan Park ,  Jung-Hun Lim ,  Jin-Uk Lee

IPC: C09G1/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H10B43/27 ,  H10B43/35 ,  H01L21/762

CPC classification number: C09G1/04 ,  H01L21/02458 ,  H01L21/31056 ,  H01L21/31111 ,  H10B43/27 ,  H10B43/35 ,  H01L21/76224

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US11499073B2

公开(公告)日：2022-11-15

申请号：US17090910

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan Park ,  Jung-Hun Lim ,  Jin-Uk Lee

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/311 ,  H01L21/762

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20150200112A1

公开(公告)日：2015-07-16

申请号：US14492122

申请日：2014-09-22

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hoon Han ,  Byoung-Moon Yoon ,  Young-Taek Hong ,  Keon-Young Kim ,  Jun-Youl Yang ,  Young-Ok Kim ,  Tae-Heon Kim ,  Sun-Joong Song ,  Jung-Hun Lim ,  Jae-Wan Park ,  Jin-Uk Lee

IPC: H01L21/3213 ,  H01L29/423 ,  C23F1/16 ,  H01L21/02

CPC classification number: H01L21/32133 ,  C09K13/04 ,  C23F1/26 ,  H01L21/32115 ,  H01L21/32134 ,  H01L27/11582 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/66666 ,  H01L29/7827

Abstract: The present disclosure herein relates to methods of forming conductive patterns and to methods of manufacturing semiconductor devices using the same. In some embodiments, a method of forming a conductive pattern includes forming a first conductive layer and a second conductive layer on a substrate. The first conductive layer and the second conductive layer may include a metal nitride and a metal, respectively. The first conductive layer and the second conductive layer may be etched using an etchant composition that includes phosphoric acid, nitric acid, an assistant oxidant and a remainder of water. The etchant composition may have substantially the same etching rate for the metal nitride and the metal.

Abstract translation: 本公开内容涉及形成导电图案的方法以及使用其形成半导体器件的方法。 在一些实施例中，形成导电图案的方法包括在衬底上形成第一导电层和第二导电层。 第一导电层和第二导电层可以分别包括金属氮化物和金属。 可以使用包括磷酸，硝酸，辅助氧化剂和剩余的水的蚀刻剂组合物来蚀刻第一导电层和第二导电层。 蚀刻剂组合物可以具有与金属氮化物和金属基本相同的蚀刻速率。