公开(公告)号：US20250019827A1

公开(公告)日：2025-01-16

申请号：US18708305

申请日：2022-11-08

Applicant: SOULBRAIN CO., LTD.

Inventor： Chang Bong YEON ,  Jae Sun JUNG ,  Seung Hyun LEE

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/285

Abstract: The present invention relates to a film quality improver, a method of forming a thin film using the film quality improver, a semiconductor substrate fabricated using the method, and a semiconductor device including the semiconductor substrate. The present invention provides a compound having a predetermined structure as a film quality improver. According to the present invention, by forming a shielding area for a molybdenum-based thin film on a substrate, the deposition rate of a molybdenum-based thin film may be reduced, and the growth rate of a thin film may be controlled. Thus, even when forming a thin film using a solid compound on the substrate with a complicated structure at room temperature, step coverage and the thickness uniformity of the thin film may be greatly improved, and corrosion or deterioration may be prevented, thereby improving the crystallinity and electrical properties of a thin film.

公开(公告)号：US20230313372A1

公开(公告)日：2023-10-05

申请号：US18014265

申请日：2021-07-16

Applicant: SOULBRAIN CO., LTD.

Inventor： Chang Bong YEON ,  Jin Hee KIM ,  Jae Sun JUNG ,  Jong Moon KIM ,  Seung Hyun LEE ,  Seok Jong LEE

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/44 ,  H01L21/02

CPC classification number: C23C16/45534 ,  C23C16/0272 ,  C23C16/4408 ,  H01L21/0228 ,  H01L21/02304

Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More specifically, the growth inhibitor for forming a thin film of the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. In Chemical Formula 1, A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X includes one or more of fluorine (F), chlorine (Cl), bromine (Br), and iodine (I); Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

公开(公告)号：US20230257881A1

公开(公告)日：2023-08-17

申请号：US18014452

申请日：2021-07-16

Applicant: SOULBRAIN CO., LTD.

Inventor： Chang Bong YEON ,  Jin Hee KIM ,  Jae Sun JUNG ,  Jong Moon KIM ,  Seung Hyun LEE ,  Seok Jong LEE

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/768

CPC classification number: C23C16/45534 ,  C23C16/45536 ,  C23C16/34 ,  H01L21/76841

Abstract: The present invention relates to a growth inhibitor for forming a thin film, a method of forming a thin film using the growth inhibitor, and a semiconductor substrate fabricated by the method. More particularly, the growth inhibitor for forming a thin film according to the present invention is a compound represented by Chemical Formula 1: AnBmXoYiZj. A is carbon or silicon; B is hydrogen or an alkyl group having 1 to 3 carbon atoms; X is a leaving group having a bond dissociation energy of 50 to 350 KJ/mol; Y and Z independently include one or more selected from the group consisting of oxygen, nitrogen, sulfur, and fluorine and are different from each other; n is an integer from 1 to 15; o is an integer greater than or equal to 1; m is 0 to 2n+1; and i and j are integers from 0 to 3.

公开(公告)号：US20250003067A1

公开(公告)日：2025-01-02

申请号：US18691435

申请日：2022-09-13

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae Sun JUNG ,  Chang Bong YEON ,  Seung Hyun LEE ,  Jong Moon KIM

IPC: C23C16/455 ,  C07C19/07 ,  C07C19/08 ,  C07C19/10 ,  C07C19/14 ,  C23C16/34 ,  C23C16/44 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: The present invention relates to a film quality improver, a method of forming a thin film using the film quality improver, and a semiconductor substrate fabricated using the method. According to the present invention, side reactions may be suppressed by using a film quality improver having a predetermined structure in a thin film deposition process, and process by-products in a thin film may be removed by appropriately controlling a thin film growth rate. As a result, even when the thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity of the thin film may be greatly improved. In addition, corrosion or deterioration may be prevented, and the electrical properties of the thin film may be improved due to improvement in the crystallinity of the thin film.

公开(公告)号：US20240352583A1

公开(公告)日：2024-10-24

申请号：US18039206

申请日：2023-01-05

Applicant: SOULBRAIN CO., LTD.

Inventor： Seung Hyun LEE ,  Jae Sun JUNG ,  Chang Bong YEON ,  Deok Hyun KIM

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  H01L21/02

CPC classification number: C23C16/45553 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/50 ,  H01L21/02312

Abstract: The present invention relates to an oxide film reaction surface control agent, a method of forming an oxide film using the oxide film reaction surface control agent, a semiconductor substrate including the oxide film, and a semiconductor device including the semiconductor substrate. According to the present invention, by providing a compound having a predetermined structure as an oxide film reaction surface control agent, a deposition layer having a uniform thickness due to a difference in the adsorption distribution of the oxide film reaction surface control agent is formed as a shielding area on a substrate, thereby reducing thin film deposition rate and appropriately reducing thin film growth rate. Accordingly, even when a thin film is formed on a substrate having a complex structure, step coverage and the thickness uniformity of the thin film may be greatly improved, and impurities may be reduced.

公开(公告)号：US20240136175A1

公开(公告)日：2024-04-25

申请号：US18277074

申请日：2022-02-22

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae Sun JUNG ,  Chang Bong YEON ,  Seung Hyun LEE ,  Ji Hyun NAM ,  Sung Woo CHO

IPC: H01L21/02 ,  H01L21/3205

CPC classification number: H01L21/02214 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/32051

Abstract: The present invention relates to an auxiliary precursor, a thin film precursor composition, a method of forming a thin film using the thin film precursor composition, and a semiconductor substrate fabricated using the method. The present invention provides the thin film precursor composition including a thin film precursor compound and a compound having a predetermined structure that exhibits reaction stability as the auxiliary precursor. By using the thin film precursor composition in a thin film deposition process, side reactions may be suppressed, and thin film growth rate may be appropriately controlled. In addition, since process by-products are removed from a thin film, even when a thin film is formed on a substrate having a complicated structure, step coverage and the thickness uniformity and resistivity characteristics of the thin film may be greatly improved. In addition, corrosion or deterioration may be prevented, and the crystallinity of the thin film may be improved, thereby improving the electrical properties of the thin film.