公开(公告)号：US12218261B2

公开(公告)日：2025-02-04

申请号：US17732524

申请日：2022-04-29

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Wenliang Wang ,  Guoqiang Li ,  Baiyu Su ,  Zhengliang Lin ,  Deqi Kong ,  Wenjin Mai

IPC: H01L31/02 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/0304

Abstract: An InGaN/GaN multiple quantum well blue light detector- includes: a Si substrate, an AlN/AlGaN/GaN buffer layer, a u-GaN/AlN/u-GaN/SiNx/u-GaN buffer layer, an n-GaN buffer layer, an InGaN/GaN superlattice layer and an InGaN/GaN multiple quantum well layer in sequence from bottom to top. The multiple quantum well layer has a groove and a mesa, the mesa and the groove of the multiple quantum well layer are provided with a Si3N4 passivation layer. The passivation layer in the groove is provided with a first metal layer electrode with a semicircular cross section, and the passivation layer on the mesa is provided with second metal layer electrode.