公开(公告)号：US20250096764A1

公开(公告)日：2025-03-20

申请号：US18580179

申请日：2023-10-31

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Han HU ,  Chenyang LI ,  Tianyou LUO ,  Peidong OUYANG

IPC: H03H3/02 ,  G06F30/22 ,  G06F111/04

Abstract: A Kriging model-based optimal design method and device for a bulk acoustic resonator, and a storage medium are provided. The Kriging model-based optimal design method includes: determining a structure and a material of a resonator, establishing a corresponding MASON model, and performing one-dimensional simulation on the MASON model to obtain a simulation result; determining, based on the simulation result, a design variable for optimizing the resonator, and constructing a Kriging surrogate model; determining an optimization goal, constructing an optimization problem model based on the optimization goal and the Kriging surrogate model, and solving the optimization problem model to obtain an optimal solution; and reducing upper and lower limits of the design variable to improve optimization accuracy. The Kriging model-based optimal design method can predict a performance indicator of an unknown region based on a data characteristic of an existing variable, thereby saving a time cost of actually preparing a device.

公开(公告)号：US20250167765A1

公开(公告)日：2025-05-22

申请号：US19017865

申请日：2025-01-13

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Kaibin XU ,  Zhipeng CHEN ,  Han HU ,  Yuhan ZHU

IPC: H03H9/54 ,  H03H3/02 ,  H03H9/17

Abstract: A method for preparing a hybrid filter on a chip with IPD and FBAR, includes: preparing a leakage isolation layer on a supporting substrate by deposition; obtaining an inductor layer on the leakage isolation layer, leaving a window at a bottom of a groove surrounding a cross section of a TGV inductor stack on a mask, and patterning an inductor metal simultaneously; forming a first insulating layer on the inductor metal, and forming lead through holes by photolithography; repeating steps and alternately to obtain a three-layer stacked TGV inductor; depositing a second insulating layer on the TGV inductor; depositing two capacitor layers on the second insulating layer, and depositing a third insulating layer between the two capacitor layers to form an MIM capacitor; and preparing a BAW resonator on the MIM capacitor, and connecting the TGV inductor, the MIM capacitor and the BAW resonator through the lead through holes.