公开(公告)号：US20240088869A1

公开(公告)日：2024-03-14

申请号：US18274236

申请日：2021-10-31

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guoqiang LI ,  Tielin ZHANG ,  Hongbin LIU ,  Xinyan YI ,  Lishuai ZHAO ,  Peidong OUYANG

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/02

CPC classification number: H03H9/173 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/178 ,  H03H2003/021 ,  H03H2009/02204

Abstract: A frequency-tunable film bulk acoustic resonator and a preparation method therefor are provided. The resonator includes a substrate, an air gap, a sandwiched structure formed by electrodes and piezoelectric layers, and an electrode lead-out layer, wherein the substrate is connected to the sandwiched structure formed by the electrodes and the piezoelectric layers, and a connection face of the substrate and the sandwiched structure formed by the electrodes and the piezoelectric layers is recessed towards inside of the substrate to form the air gap; and the electrode lead-out layer is connected to the sandwiched structure formed by the electrodes and the piezoelectric layers. The sandwiched structure formed by the electrodes and the piezoelectric layers includes a bottom electrode, piezoelectric layers, intermediate electrodes, and a top electrode, wherein the electrodes and the piezoelectric layers are alternately arranged to form the sandwiched structure.