公开(公告)号：US12154990B2

公开(公告)日：2024-11-26

申请号：US17789789

申请日：2020-07-07

Applicant: SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Wenliang Wang ,  Guoqiang Li ,  Yuhui Yang ,  Deqi Kong ,  Zhiheng Xing

IPC: H01L29/872 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3213 ,  H01L23/29 ,  H01L23/31 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/66

Abstract: The present invention provides a GaN/two-dimensional AlN heterojunction rectifier on a silicon substrate and a preparation method therefor and belongs to the field of rectifiers. The rectifier comprises a silicon substrate, a GaN buffer layer, a carbon-doped semi-insulating GaN layer, a two-dimensional AlN layer, a non-doped GaN layer, a non-doped InGaN layer and a SiNx passivation layer that are stacked in sequence. The rectifier further comprises a mesa isolation groove and a Schottky contact electrode that are arranged at one side. The mesa isolation groove is in contact with the non-doped GaN layer, the non-doped InGaN layer, the SiNx passivation layer and the Schottky contact electrode. The Schottky contact electrode is in contact with the mesa isolation groove and the non-doped GaN layer. The thickness of the two-dimensional AlN layer is only several atomic layers, thus the received stress and polarization intensity are greater than those of the AlGaN layer.