公开(公告)号：US11195697B2

公开(公告)日：2021-12-07

申请号：US15760298

申请日：2017-01-20

Applicant: SPP Technologies Co., Ltd.

Inventor： Toshihiro Hayami ,  Ryosuke Fujii

IPC: H01J37/32 ,  H01L21/3065 ,  H05H1/46 ,  H01L21/67 ,  H03H7/38

Abstract: A plasma control apparatus includes a power source unit, a resonance producing unit, and a voltmeter. The resonance producing unit includes an LC circuit formed by a coil L1 and a capacitor C1 connected to each other, and a sensor S2 configured to detect a phase difference between current flowing in and voltage applied to the LC circuit, and the capacitor C1 of the LC circuit has a capacitance larger than an expected capacitance of the plasma P. The power source unit 1 configured to control the magnitude of radio-frequency power to be supplied in such a manner as to bring the voltage measured with the voltmeter 5 close to a set voltage as a target, and controls the frequency of the radio-frequency power to be supplied in such a manner as to minimize the phase difference detected with the sensor S2.

公开(公告)号：US20160153091A1

公开(公告)日：2016-06-02

申请号：US14900535

申请日：2014-03-31

Applicant: SPP TECHNOLOGIES CO., LTD.

Inventor： Toshihiro Hayami ,  Ryosuke Fujii

IPC: C23C16/56

CPC classification number: C23C16/56 ,  H01L21/67103 ,  H01L21/68742 ,  H05B3/68

Abstract: A heating device capable of efficiently heating an object to be heated with a small heating element and a plasma processing apparatus provided with the heating device are provided. A plasma processing apparatus 1 includes a processing chamber 2 having a plasma generating space 3a defined in an upper portion thereof and a processing space 4a defined in a lower portion thereof, a platen 9 disposed in the processing space 4a for placing a substrate K thereon, a processing gas supply unit 7 supplying a processing gas into the plasma generating space 3a, a plasma generating unit 5 generating plasma from the processing gas supplied into the plasma generating space 3a by RF power, a plasma-generation RF power supply 6 supplying RF power to the plasma generating unit 5, and a heating device 13. The heating device 13 is composed of a heating element 14 including a conductor having a product ρ·μ [Ω·H] of its electrical resistivity ρ [Ω·m] and its magnetic permeability μ [H/m] equal to or greater than 8.0×10−13, and a heating RF power supply 16 supplying RF power to the heating element 14.

Abstract translation: 提供了一种能够用小型加热元件有效地加热待加热物体的加热装置和设置有加热装置的等离子体处理装置。 等离子体处理装置1包括具有限定在其上部的等离子体产生空间3a和限定在其下部的处理空间4a的处理室2，设置在处理空间4a中的用于将基板K放置在其上的压板9， 将处理气体供给到等离子体产生空间3a中的处理气体供给单元7，通过RF功率从供给到等离子体生成空间3a的处理气体产生等离子体的等离子体生成单元5，提供RF功率的等离子体生成用RF电源6 等离子体发生单元5和加热装置13.加热装置13由包括导电体的加热元件14组成，该导体具有其电阻率＆rgr;μ[＆OHgr·H] [＆OHgr;·m]，其磁导率μ[H / m]等于或大于8.0×10-13，以及向加热元件14提供RF功率的加热RF电源16。

公开(公告)号：US20160118225A1

公开(公告)日：2016-04-28

申请号：US14894922

申请日：2014-03-31

Applicant: SPP TECHNOLOGIES CO., LTD.

Inventor： Toshihiro Hayami

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32834

Abstract: A plasma etching apparatus 1 includes a processing chamber 2 having a plasma generating portion 3, a processing portion 4, an exhaust portion 5, and a manifold portion 6 defined inside, and an exhaust mechanism 30 for exhausting gas in the processing chamber 2, the exhaust mechanism 30 is composed of a vacuum pump 31 having an intake port connected to an opening 8, a valve body 32 inserted through an opening 9, and a moving mechanism 34 for moving the valve body 32 in upward and downward directions, and the intake port of the vacuum pump 31 is connected to the opening 8 which is formed in a third chamber 2c forming a part of the processing chamber 2.

Abstract translation: 等离子体蚀刻装置1包括具有等离子体产生部分3，处理部分4，排气部分5和限定在其内部的歧管部分6的处理室2和用于排出处理室2中的气体的排气机构30， 排气机构30由具有连接到开口8的进气口的真空泵31，通过开口9插入的阀体32和用于使阀体32沿上下方向移动的移动机构34和进气口 真空泵31的端口连接到形成在形成处理室2的一部分的第三室2c中的开口8。

公开(公告)号：US20160358748A1

公开(公告)日：2016-12-08

申请号：US14897423

申请日：2014-03-31

Applicant: SPP TECHNOLOGIES CO., LTD.

Inventor： Toshihiro Hayami ,  Toshiya Miyazaki

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/3211 ,  H01J37/32119 ,  H01J37/3244 ,  H01J2237/334 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma etching apparatus includes a chamber having a processing space and a plasma generating space 4 defined therein and a coil 20 wound around the processing chamber, the coil 20 has at least three inward projecting portions 21 formed thereon which project inward in a radial direction with respect to a pitch circle P defined outside a portion of the processing chamber 2 corresponding to the plasma generating space 4, and the at least three inward projecting portions 21 are arranged at equal intervals along a circumferential direction of the pitch circle P.

Abstract translation: 等离子体蚀刻装置包括具有处理空间的腔室和限定在其中的等离子体产生空间4和缠绕在处理室上的线圈20，线圈20具有形成在其上的至少三个向内突出的部分21，径向向内突出， 相对于对应于等离子体产生空间4的处理室2的一部分外部限定的节圆P，并且至少三个向内突出部21沿着节圆P的圆周方向以相等的间隔布置。