公开(公告)号：US20230230810A1

公开(公告)日：2023-07-20

申请号：US17923931

申请日：2020-10-05

Applicant: SPP Technologies Co., Ltd.

Inventor： Kazuyuki SUEDA ,  Masahiro SASAKURA ,  Ryoto YAMAMOTO ,  Mai SUMIKAWA

IPC: H01J37/32 ,  C23C16/02 ,  C23C16/50 ,  C23C16/56

CPC classification number: H01J37/3244 ,  C23C16/0245 ,  C23C16/50 ,  C23C16/56 ,  H01J2237/334 ,  H01J2237/332 ,  H01J2237/0203

Abstract: A plasma processing apparatus 100, which has an impact on global warming and allows for high-throughput plasma processing, includes a chamber 1 in which plasma is generated, a mounting table 2 disposed in the chamber, wherein a substrate S is mounted on the mounting table 2, and a gas supply source 3 (3a to 3d) for supplying gas for generating plasma in the chamber, wherein the substrate is subjected to deep etching by executing alternately and repeatedly an etching process S2 of etching the substrate by using plasma and a protective film deposition process S3 of depositing a protective film in a recess formed through the etching process by using plasma. It is characterized in that, in the protective film deposition process S3, a mixed gas of C4F8 and 2,3,3,3-tetrafluoropropene is supplied from the gas supply sources 3b, 3c into the chamber as gas supplied for generating plasma.