公开(公告)号：US20180158689A1

公开(公告)日：2018-06-07

申请号：US15830969

申请日：2017-12-04

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： ROLAND MUMFORD

IPC: H01L21/3065 ,  H01L21/67 ,  H01L21/768

CPC classification number: H01L21/3065 ,  H01L21/67069 ,  H01L21/76898

Abstract: According to the invention there is provided a method of smoothing a surface of a silicon substrate comprising the steps of: providing a silicon substrate having a backside surface, wherein the silicon substrate has been ground to leave the backside surface with an associated roughness; and smoothing the backside surface of the silicon substrate using a plasma etch process; in which the plasma etch process comprises the steps of performing a first plasma etch step which forms a plurality of protrusions that upstand from the backside surface; and performing a second plasma etch step which at least partially etches the protrusions to provide a smoothed backside surface which exhibits specular reflection.

公开(公告)号：US20180144911A1

公开(公告)日：2018-05-24

申请号：US15690414

申请日：2017-08-30

Applicant: SPTS TECHNOLOGIES LIMITED

Inventor： HUMA ASHRAF ,  KEVIN RIDDELL ,  ROLAND MUMFORD ,  GRANT BALDWIN

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32935 ,  H01J37/32082 ,  H01J37/32715 ,  H01J37/32724 ,  H01J37/32917 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67288

Abstract: A method and system are for monitoring and controlling deformation of a wafer substrate during a plasma etching of the wafer substrate. The method includes disposing a wafer substrate on a platen assembly within a process chamber so that an entire upper surface of the wafer is exposed, passing a process gas into the process chamber, applying a radio frequency bias voltage to the platen assembly, generating a plasma within the process chamber, monitoring a voltage difference between the platen assembly and the process chamber, during the etch process, and attenuating or extinguishing the plasma to prevent further etching once a threshold monitored voltage is reached.