公开(公告)号：US11664232B2

公开(公告)日：2023-05-30

申请号：US17098426

申请日：2020-11-15

Applicant: SPTS Technologies Limited

Inventor： Huma Ashraf ,  Kevin Riddell ,  Codrin Prahoveanu

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/308 ,  H01L21/67 ,  H01L21/683 ,  H01L29/16

CPC classification number: H01L21/3065 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32715 ,  H01L21/308 ,  H01L21/67069 ,  H01L21/6831 ,  H01J2237/2007 ,  H01J2237/334 ,  H01L29/16 ,  H01L29/1608

Abstract: A structure comprising a substrate and a component which forms involatile metal etch products is plasma etched. A structure comprising a substrate and a component which forms involatile metal etch products is provided. The structure is positioned on a support within a chamber having a first gas inlet arrangement comprising one or more gas inlets and a second gas inlet arrangement comprising one or more gas inlets. The structure is etched by performing a first plasma etch step using a first etch process gas mixture which is only introduced into the chamber through the first gas inlet arrangement. The structure is further etched by performing a second plasma etch step using a second etch process gas mixture which is only introduced into the chamber through the second gas inlet arrangement.

公开(公告)号：US20210193471A1

公开(公告)日：2021-06-24

申请号：US17098426

申请日：2020-11-15

Applicant: SPTS Technologies Limited

Inventor： Huma Ashraf ,  Kevin Riddell ,  Codrin Prahoveanu

IPC: H01L21/3065 ,  H01L21/308 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32

Abstract: A structure comprising a substrate and a component which forms involatile metal etch products is plasma etched. A structure comprising a substrate and a component which forms involatile metal etch products is provided. The structure is positioned on a support within a chamber having a first gas inlet arrangement comprising one or more gas inlets and a second gas inlet arrangement comprising one or more gas inlets. The structure is etched by performing a first plasma etch step using a first etch process gas mixture which is only introduced into the chamber through the first gas inlet arrangement. The structure is further etched by performing a second plasma etch step using a second etch process gas mixture which is only introduced into the chamber through the second gas inlet arrangement.

公开(公告)号：US11489106B2

公开(公告)日：2022-11-01

申请号：US17101951

申请日：2020-11-23

Applicant: SPTS Technologies Limited

Inventor： Huma Ashraf ,  Kevin Riddell ,  Codrin Prahoveanu

IPC: H01L21/3065 ,  H01L41/332 ,  H01J37/32

Abstract: A structure comprising a semiconductor substrate and a layer of PZT (lead zirconate titanate) is etched by performing a first plasma etch step with a first etch process gas mixture. The first etch process gas mixture comprises at least one fluorine containing species. The first plasma etch step is performed so that involatile metal etch products are deposited onto interior surfaces of the chamber. The structure is further etched by performing a second plasma etch step with a second etch process gas mixture. The second etch process gas mixture comprises at least one fluorocarbon species. The second plasma etch step is performed so that a fluorocarbon polymer layer is deposited onto interior surfaces of the chamber to overlay involatile metal etch products deposited in the first plasma etch step and to provide a substrate on which further involatile metal etch products can be deposited.

公开(公告)号：US20210193908A1

公开(公告)日：2021-06-24

申请号：US17101951

申请日：2020-11-23

Applicant: SPTS Technologies Limited

Inventor： Huma Ashraf ,  Kevin Riddell ,  Codrin Prahoveanu

IPC: H01L41/332 ,  H01J37/32

Abstract: A structure comprising a semiconductor substrate and a layer of PZT (lead zirconate titanate) is etched by performing a first plasma etch step with a first etch process gas mixture. The first etch process gas mixture comprises at least one fluorine containing species. The first plasma etch step is performed so that involatile metal etch products are deposited onto interior surfaces of the chamber. The structure is further etched by performing a second plasma etch step with a second etch process gas mixture. The second etch process gas mixture comprises at least one fluorocarbon species. The second plasma etch step is performed so that a fluorocarbon polymer layer is deposited onto interior surfaces of the chamber to overlay involatile metal etch products deposited in the first plasma etch step and to provide a substrate on which further involatile metal etch products can be deposited.