公开(公告)号：US09947826B2

公开(公告)日：2018-04-17

申请号：US15288827

申请日：2016-10-07

Applicant: STANLEY ELECTRIC CO., LTD.

Inventor： Michihiro Sano ,  Yuka Sato

IPC: H01L33/00 ,  H01L33/28 ,  H01L29/00

CPC classification number: H01L33/0083 ,  H01L21/02403 ,  H01L21/02472 ,  H01L21/02507 ,  H01L21/02554 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/00 ,  H01L29/155 ,  H01L29/22 ,  H01L29/225 ,  H01L33/0012 ,  H01L33/285

Abstract: A method of manufacturing ZnO-containing semiconductor structure includes steps of: (a) forming a subsidiary lamination, including alternately laminating at least two periods of active oxygen layers and ZnO-containing semiconductor layers doped with at least one species of group 3B element; (b) alternately laminating said subsidiary lamination and AgO layer, sandwiching an active oxygen layer, to form lamination structure; and (c) carrying out annealing in atmosphere in which active oxygen exists and pressure is below 10−2 Pa, intermittently irradiating oxygen radical beam on a surface of said lamination structure, forming a p-type ZnO-containing semiconductor structure co-doped with said group 3B element and Ag.

公开(公告)号：US09496350B2

公开(公告)日：2016-11-15

申请号：US14686024

申请日：2015-04-14

Applicant: STANLEY ELECTRIC CO., LTD.

Inventor： Chizu Saito ,  Hiroyuki Kato ,  Michihiro Sano

IPC: H01L29/227 ,  H01L29/36 ,  H01L21/02 ,  H01L29/12 ,  H01L29/22

CPC classification number: H01L29/227 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/12 ,  H01L29/22 ,  H01L29/36

Abstract: A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the relation: 0.9≦[11]/[13]

Abstract translation: 一种p型ZnO基化合物半导体单晶层，其中该层包括与（i）作为Cu和/或Ag的第11族元素​​共同掺杂的p型ZnO基化合物半导体单晶层，以及（ii） 选自B，Ga，Al和In中的至少一种13族元素，第11族元素​​[11]的浓度和第13族元素[13]的浓度满足关系：0.9≤[11 ] / [13] <100。

公开(公告)号：US09064791B2

公开(公告)日：2015-06-23

申请号：US14197900

申请日：2014-03-05

Applicant: Stanley Electric Co., Ltd.

Inventor： Chizu Saito ,  Hiroyuki Kato ,  Michihiro Sano

IPC: H01L21/00 ,  H01L21/16 ,  H01L29/22 ,  H01L21/02 ,  H01L29/12

CPC classification number: H01L29/227 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/12 ,  H01L29/22 ,  H01L29/36

Abstract: A method for producing a p-type ZnO based compound semiconductor layer including the steps of (a) supplying (i) Zn, (ii) O, (iii) optional Mg, and (iv) a Group 11 element which is Cu and/or Ag to form a MgxZn1-xO (0≦x≦0.6) single crystal film doped with the Group 11 element; (b) supplying at least one Group 13 element selected from the group consisting of B, Ga, Al, and In on the MgxZn1-xO (0≦x≦0.6) single crystal film; (c) alternately carrying out the steps (a) and (b) to form a laminate structure; and (d) annealing the laminate structure to form a p-type MgxZn1-xO (0≦x≦0.6) layer co-doped with the Group 11 element and the Group 13 element.

Abstract translation: 一种制备p型ZnO基化合物半导体层的方法，包括以下步骤：（a）提供（i）Zn，（ii）O，（iii）任选的Mg，和（iv）第11族元素​​，其为Cu和/ 或Ag以形成掺杂有第11族元素​​的Mg x Zn 1-x O（0＆nlE; x＆lt; lE; 0.6）单晶膜; （b）在Mg x Zn 1-x O（0＆nlE; x＆nlE; 0.6）单晶膜上提供从由B，Ga，Al和In组成的组中选择的至少一种13族元素; （c）交替地执行步骤（a）和（b）以形成层压结构; 和（d）层压结构退火以形成与第11族元素​​和第13族元素共掺杂的p型Mg x Zn 1-x O（0＆lt; n 1; x＆lt; lE; 0.6）层。

公开(公告)号：US09064790B2

公开(公告)日：2015-06-23

申请号：US13948771

申请日：2013-07-23

Applicant: STANLEY ELECTRIC CO., LTD.

Inventor： Chizu Saito ,  Hiroyuki Kato ,  Michihiro Sano

IPC: H01L21/00 ,  H01L21/16 ,  H01L29/22 ,  H01L21/02 ,  H01L29/12

CPC classification number: H01L29/227 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/12 ,  H01L29/22 ,  H01L29/36

Abstract: A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element.

Abstract translation: 提供了一种生产p型ZnO基化合物半导体层的方法。 该方法包括以下步骤：（a）制备含有Cu和/或Ag的11族元素​​的n型单晶ZnO基化合物半导体结构和至少一种选自B，Ga， Al和In，和（b）退火n型单晶ZnO基化合物半导体结构，形成与11族元素​​和13族元素共掺杂的p型ZnO基化合物半导体层。