Abstract:
To provide a light source module device capable of controlling the light distribution of ultraviolet light with a small and simple structure. A light source module device 7 includes a substrate 4, a light source 3 mounted on the substrate 4 and emitting ultraviolet light, a reflector 8 mounted on the substrate 4 so as to surround the light source 3 and reflecting the ultraviolet light by its inner surface to guide the ultraviolet light toward an irradiation target, and a cap-like optical member 9 mounted so as to cover the outer circumference of the reflector 8 and condensing or diffusing the ultraviolet light.
Abstract:
A fluid processing apparatus includes: a casing having a fluid inlet pipe and a fluid outlet pipe; multiple rectifying plates with holes in parallel with each other provided within the casing on a side of the fluid inlet pipe, the rectifying plates being perpendicular to a longitudinal axis of the casing; and a light source for irradiating fluid passing from the fluid inlet pipe through the casing to the fluid outlet pipe with ultraviolet rays.
Abstract:
An ultraviolet ray emitting package includes: a substrate having an upper portion defining a recess; an ultraviolet ray emitting element provided within the recess of the substrate; an ultraviolet ray transmitting window member provided on the upper portion of the substrate to cover the recess of the substrate; a resin adhesive layer provided between the upper portion of the substrate and the ultraviolet ray transmitting window member; and an optical shielding layer provided between the resin adhesive layer and the ultraviolet ray transmitting window member.
Abstract:
A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the relation: 0.9≦[11]/[13]
Abstract:
A method for producing a p-type ZnO based compound semiconductor layer including the steps of (a) supplying (i) Zn, (ii) O, (iii) optional Mg, and (iv) a Group 11 element which is Cu and/or Ag to form a MgxZn1-xO (0≦x≦0.6) single crystal film doped with the Group 11 element; (b) supplying at least one Group 13 element selected from the group consisting of B, Ga, Al, and In on the MgxZn1-xO (0≦x≦0.6) single crystal film; (c) alternately carrying out the steps (a) and (b) to form a laminate structure; and (d) annealing the laminate structure to form a p-type MgxZn1-xO (0≦x≦0.6) layer co-doped with the Group 11 element and the Group 13 element.
Abstract translation:一种制备p型ZnO基化合物半导体层的方法,包括以下步骤:(a)提供(i)Zn,(ii)O,(iii)任选的Mg,和(iv)第11族元素,其为Cu和/ 或Ag以形成掺杂有第11族元素的Mg x Zn 1-x O(0≦̸ x< lE; 0.6)单晶膜; (b)在Mg x Zn 1-x O(0≦̸ x≦̸ 0.6)单晶膜上提供从由B,Ga,Al和In组成的组中选择的至少一种13族元素; (c)交替地执行步骤(a)和(b)以形成层压结构; 和(d)层压结构退火以形成与第11族元素和第13族元素共掺杂的p型Mg x Zn 1-x O(0< n 1; x< lE; 0.6)层。
Abstract:
To provide a light source module device capable of controlling the light distribution of ultraviolet light with a small and simple structure. A light source module device 7 includes a substrate 4, a light source 3 mounted on the substrate 4 and emitting ultraviolet light, a reflector 8 mounted on the substrate 4 so as to surround the light source 3 and reflecting the ultraviolet light by its inner surface to guide the ultraviolet light toward an irradiation target, and a cap-like optical member 9 mounted so as to cover the outer circumference of the reflector 8 and condensing or diffusing the ultraviolet light.
Abstract:
A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element.
Abstract:
A fluid processing apparatus includes: a casing having a fluid inlet pipe and a fluid outlet pipe; multiple rectifying plates with holes in parallel with each other provided within the casing on a side of the fluid inlet pipe, the rectifying plates being perpendicular to a longitudinal axis of the casing; and a light source for irradiating fluid passing from the fluid inlet pipe through the casing to the fluid outlet pipe with ultraviolet rays.
Abstract:
An ultraviolet ray emitting package includes: a substrate having an upper portion defining a recess; an ultraviolet ray emitting element provided within the recess of the substrate; an ultraviolet ray transmitting window member provided on the upper portion of the substrate to cover the recess of the substrate; a resin adhesive layer provided between the upper portion of the substrate and the ultraviolet ray transmitting window member; and an optical shielding layer provided between the resin adhesive layer and the ultraviolet ray transmitting window member.