公开(公告)号：US20150097295A1

公开(公告)日：2015-04-09

申请号：US14572298

申请日：2014-12-16

Applicant: STATS ChipPAC, Ltd.

Inventor： JaeHyun Lee ,  SunJae Kim ,  JoongGi Kim

IPC: H01L23/528 ,  H01L23/00 ,  H01L21/768 ,  H01L23/525 ,  H01L23/522

CPC classification number: H01L23/528 ,  H01L21/4867 ,  H01L21/563 ,  H01L21/565 ,  H01L21/768 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/5221 ,  H01L23/5252 ,  H01L23/5256 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10175 ,  H01L2224/16237 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the semiconductor die. A first conductive layer having first and second segments is formed over a surface of the substrate with a first vent separating an end of the first segment and the second segment and a second vent separating an end of the second segment and the first segment. A second conductive layer is formed over the surface of the substrate to electrically connect the first segment and second segment. The thickness of the second conductive layer can be less than a thickness of the first conductive layer to form the first vent and second vent. The semiconductor die is mounted to the substrate with the bumps aligned to the first segment and second segment. Bump material from reflow of the bumps is channeled into the first vent and second vent.

Abstract translation: 半导体器件具有形成在半导体管芯的表面上的多个凸点的半导体管芯。 具有第一和第二段的第一导电层形成在衬底的表面上，其中第一通气口分隔第一段和第二段的端部，第二通气口分隔第二段和第一段的一端。 第二导电层形成在衬底的表面上以电连接第一段和第二段。 第二导电层的厚度可以小于第一导电层的厚度，以形成第一通气孔和第二通气口。 将半导体管芯安装到衬底上，其中凸块与第一段和第二段对准。 凸块的回流材料的凸起材料被引导到第一通风口和第二排气口中。

公开(公告)号：US09679846B2

公开(公告)日：2017-06-13

申请号：US14572298

申请日：2014-12-16

Applicant: STATS ChipPAC, Ltd.

Inventor： JaeHyun Lee ,  SunJae Kim ,  JoongGi Kim

IPC: H01L23/48 ,  H01L23/528 ,  H01L23/498 ,  H01L21/48 ,  H01L23/31 ,  H01L21/768 ,  H01L23/522 ,  H01L23/525 ,  H01L21/56 ,  H01L23/00

CPC classification number: H01L23/528 ,  H01L21/4867 ,  H01L21/563 ,  H01L21/565 ,  H01L21/768 ,  H01L23/3121 ,  H01L23/3128 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/5221 ,  H01L23/5252 ,  H01L23/5256 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/10175 ,  H01L2224/16237 ,  H01L2224/81191 ,  H01L2224/81385 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2224/11 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device has a semiconductor die with a plurality of bumps formed over a surface of the semiconductor die. A first conductive layer having first and second segments is formed over a surface of the substrate with a first vent separating an end of the first segment and the second segment and a second vent separating an end of the second segment and the first segment. A second conductive layer is formed over the surface of the substrate to electrically connect the first segment and second segment. The thickness of the second conductive layer can be less than a thickness of the first conductive layer to form the first vent and second vent. The semiconductor die is mounted to the substrate with the bumps aligned to the first segment and second segment. Bump material from reflow of the bumps is channeled into the first vent and second vent.