公开(公告)号：US09418954B2

公开(公告)日：2016-08-16

申请号：US14659680

申请日：2015-03-17

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Pierre Bar ,  Alisee Taluy ,  Olga Kokshagina

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00 ,  H01L23/498 ,  H01L21/3213 ,  H01L21/56 ,  H01L21/768 ,  H01L23/36 ,  H01L21/48

CPC classification number: H01L23/3675 ,  H01L21/32139 ,  H01L21/4853 ,  H01L21/4871 ,  H01L21/4882 ,  H01L21/563 ,  H01L21/565 ,  H01L21/76897 ,  H01L23/3135 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/14519 ,  H01L2224/29013 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/3015 ,  H01L2224/30519 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/9211 ,  H01L2924/12042 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/83

Abstract: A device includes a chip assembled on an interposer. An electrically-insulating layer coats an upper surface of the interposer around the chip. First metal lines run on the upper surface of the interposer and are arranged between conductive elements of connection to the chip. An end of each first metal line is arranged to extend beyond a projection of the chip on the interposer. A thermally-conductive via connects the end of the first metal line to a heat sink supported at an upper surface of the device.

Abstract translation: 一种装置包括组装在插入器上的芯片。 电绝缘层在芯片周围涂覆插入件的上表面。 第一金属线在插入件的上表面上延伸并且布置在与芯片连接的导电元件之间。 每个第一金属线的端部被布置成延伸超过芯片在插入件上的投影。 导热通孔将第一金属线的端部连接到支撑在设备的上表面处的散热器。

公开(公告)号：US09165861B2

公开(公告)日：2015-10-20

申请号：US14287343

申请日：2014-05-27

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Pierre Bar ,  Simon Gousseau ,  Yann Beilliard

IPC: H01L23/427 ,  H01L23/48 ,  H01L21/768 ,  H01L23/367 ,  H01L23/00

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/3677 ,  H01L23/4275 ,  H01L24/16 ,  H01L24/73 ,  H01L2224/16235 ,  H01L2224/73204

Abstract: A method for producing at least one through-silicon via inside a substrate may include forming a cavity in the substrate from a first side of the substrate until an electrically conductive portion is emerged onto. The method may also include forming an electrically conductive layer at a bottom and on walls of the cavity, and at least partly on a first side outside the cavity. The process may further include at least partially filling the cavity with at least one phase-change material. Another aspect is directed to a three-dimensional integrated structure.

Abstract translation: 用于在衬底内部生产至少一个穿硅的方法可包括在衬底的第一侧从衬底的第一侧形成空腔，直到导电部分出现。 该方法还可以包括在空腔的底部和壁上形成导电层，并且至少部分地在空腔外部的第一侧上形成导电层。 该方法还可以包括用至少一种相变材料至少部分地填充空腔。 另一方面涉及三维综合结构。

公开(公告)号：US20160322276A1

公开(公告)日：2016-11-03

申请号：US15204488

申请日：2016-07-07

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Pierre Bar ,  Alisee Taluy ,  Olga Kokshagina

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L23/3675 ,  H01L21/32139 ,  H01L21/4853 ,  H01L21/4871 ,  H01L21/4882 ,  H01L21/563 ,  H01L21/565 ,  H01L21/76897 ,  H01L23/3135 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/14519 ,  H01L2224/29013 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/3015 ,  H01L2224/30519 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/9211 ,  H01L2924/12042 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/83

Abstract: A device includes a chip assembled on an interposer. An electrically-insulating layer coats an upper surface of the interposer around the chip. First metal lines run on the upper surface of the interposer and are arranged between conductive elements of connection to the chip. An end of each first metal line is arranged to extend beyond a projection of the chip on the interposer. A thermally-conductive via connects the end of the first metal line to a heat sink supported at an upper surface of the device.

公开(公告)号：US20140075726A1

公开(公告)日：2014-03-20

申请号：US14084394

申请日：2013-11-19

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： David Petit ,  Sylvain Joblot ,  Pierre Bar ,  Jean-Francois Carpentier ,  Pierre Dautriche

IPC: H03H3/02

CPC classification number: H03H3/02 ,  G01N29/022 ,  G02F1/133707 ,  H03H3/04 ,  H03H9/0028 ,  H03H9/02102 ,  H03H9/175 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.

Abstract translation: 一种制造晶片的方法，其上形成有谐振器，每个谐振器包括在半导体衬底上方的一叠层，其从衬底表面依次包括：布拉格反射镜; 由具有与所有其它堆叠层相反的符号的声速的温度系数的材料制成的补偿层; 和压电谐振器，该方法包括以下连续步骤：a）沉积补偿层; 和b）由于沉积方法而减小补偿层的厚度不等式，使得该层在每个谐振器的电平上具有相同的厚度，优于2％以内，优选在1％以内。

公开(公告)号：US09647625B2

公开(公告)日：2017-05-09

申请号：US14084394

申请日：2013-11-19

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： David Petit ,  Sylvain Joblot ,  Pierre Bar ,  Jean-Francois Carpentier ,  Pierre Dautriche

IPC: H03H3/02 ,  H03H9/02 ,  H03H3/04 ,  H03H9/00 ,  H03H9/17 ,  G02F1/1337 ,  G01N29/02

CPC classification number: H03H3/02 ,  G01N29/022 ,  G02F1/133707 ,  H03H3/04 ,  H03H9/0028 ,  H03H9/02102 ,  H03H9/175 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.

公开(公告)号：US20150270192A1

公开(公告)日：2015-09-24

申请号：US14659680

申请日：2015-03-17

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Pierre Bar ,  Alisee Taluy ,  Olga Kokshagina

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/538 ,  H01L21/768 ,  H01L21/48 ,  H01L21/3213 ,  H01L21/56 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L23/3675 ,  H01L21/32139 ,  H01L21/4853 ,  H01L21/4871 ,  H01L21/4882 ,  H01L21/563 ,  H01L21/565 ,  H01L21/76897 ,  H01L23/3135 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/14519 ,  H01L2224/29013 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/3015 ,  H01L2224/30519 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/9211 ,  H01L2924/12042 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/83

Abstract: A device includes a chip assembled on an interposer. An electrically-insulating layer coats an upper surface of the interposer around the chip. First metal lines run on the upper surface of the interposer and are arranged between conductive elements of connection to the chip. An end of each first metal line is arranged to extend beyond a projection of the chip on the interposer. A thermally-conductive via connects the end of the first metal line to a heat sink supported at an upper surface of the device.

Abstract translation: 一种装置包括组装在插入器上的芯片。 电绝缘层在芯片周围涂覆插入件的上表面。 第一金属线在插入件的上表面上延伸并且布置在与芯片连接的导电元件之间。 每个第一金属线的端部被布置成延伸超过芯片在插入件上的投影。 导热通孔将第一金属线的端部连接到支撑在设备的上表面处的散热器。

公开(公告)号：US20230050334A1

公开(公告)日：2023-02-16

申请号：US17815522

申请日：2022-07-27

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Pierre Bar ,  Jean Luc Huguenin

IPC: H01L27/146

Abstract: In an embodiment a method for manufacturing an image sensor includes forming of a plurality of microlenses at a first resin layer, forming a mask on top of and in contact with the first resin layer, the mask comprising a second resin; and chemical plasma etching the first resin layer through the mask.

公开(公告)号：US11469095B2

公开(公告)日：2022-10-11

申请号：US16709251

申请日：2019-12-10

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Delia Ristoiu ,  Pierre Bar ,  Francois Leverd

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67

Abstract: The present disclosure relates to a method for forming a cavity that traverses a stack of layers including a bottom layer, a first portion of which locally presents an excess thickness, the method comprising a first step of non-selective etching and a second step of selective etching vertically in line with the first portion.

公开(公告)号：US10770306B2

公开(公告)日：2020-09-08

申请号：US16240044

申请日：2019-01-04

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Pierre Bar ,  Francois Leverd ,  Delia Ristoiu

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/308 ,  H01L21/02 ,  G02B6/36 ,  G02B6/42

Abstract: A cavity is etched in a stack of layers which includes a first layer made of a first material and a second layer made of a second material. To etch the cavity, a first etch mask having a first opening is formed over the stack of layer. The stack of layers is then etched through the first opening to a depth located in the second layer. A second mask having a second opening, the dimensions of which are smaller, in top view, than the first opening, is formed over the stack of layer. The second opening is located, in top view, opposite the area etched through the first opening. The second layer is then etched through the second opening to reach the first layer. The etch method used is configured to etch the second material selectively over the first material.

公开(公告)号：US09780015B2

公开(公告)日：2017-10-03

申请号：US15204488

申请日：2016-07-07

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Pierre Bar ,  Alisee Taluy ,  Olga Kokshagina

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/36

CPC classification number: H01L23/3675 ,  H01L21/32139 ,  H01L21/4853 ,  H01L21/4871 ,  H01L21/4882 ,  H01L21/563 ,  H01L21/565 ,  H01L21/76897 ,  H01L23/3135 ,  H01L23/3157 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/13147 ,  H01L2224/14131 ,  H01L2224/14519 ,  H01L2224/29013 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/3015 ,  H01L2224/30519 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/9211 ,  H01L2924/12042 ,  H01L2924/18161 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/83

Abstract: A device includes a chip assembled on an interposer. An electrically-insulating layer coats an upper surface of the interposer around the chip. First metal lines run on the upper surface of the interposer and are arranged between conductive elements of connection to the chip. An end of each first metal line is arranged to extend beyond a projection of the chip on the interposer. A thermally-conductive via connects the end of the first metal line to a heat sink supported at an upper surface of the device.