公开(公告)号：US11362204B2

公开(公告)日：2022-06-14

申请号：US16706201

申请日：2019-12-06

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard ,  Lionel Jaouen

IPC: H01L29/74 ,  H01L29/749 ,  H01L29/06 ,  H01L29/08

Abstract: A thyristor is formed from a vertical stack of first, second, third, and fourth semiconductor regions of alternated conductivity types. The fourth semiconductor region is interrupted in a gate area of the thyristor. The fourth semiconductor region is further interrupted in a continuous corridor that extends longitudinally from the gate area towards an outer lateral edge of the fourth semiconductor region. A gate metal layer extends over the gate area of the thyristor. A cathode metal layer extends over the fourth semiconductor region but not over the continuous corridor.

公开(公告)号：US11949023B2

公开(公告)日：2024-04-02

申请号：US17556634

申请日：2021-12-20

Applicant: STMicroelectronics (Tours) SAS

Inventor： Arnaud Yvon ,  Lionel Jaouen

IPC: H01L29/861 ,  H01L21/761 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/8611 ,  H01L21/761 ,  H01L29/0623 ,  H01L29/66128 ,  H01L29/66136

Abstract: A device includes a diode. The anode of the diode includes first, second, and third areas. The first area partially covers the second area and has a first doping level greater than a second doping level of the second area. The second area partially covers the third area and has the second doping level greater than a third doping level of the third area. A first insulating layer partially overlaps the first and second areas.