公开(公告)号：US20230100985A1

公开(公告)日：2023-03-30

申请号：US17825510

申请日：2022-05-26

Applicant: Samsung Display Co., LTD.

Inventor： Jaewoo JEONG ,  Taesung KIM ,  Hyunmin CHO ,  Taewook KANG ,  Byung Soo SO

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: A display panel according to an embodiment includes a substrate, a thin film transistor disposed on the substrate, and a light emitting element electrically connected to the thin film transistor. The substrate includes a first resin layer, a first barrier layer disposed on the first resin layer, a second resin layer including a lower portion disposed on the first barrier layer and an upper portion having a carbon content less than a carbon content of the lower portion, and a second barrier layer disposed on the second resin layer.

公开(公告)号：US20210277512A1

公开(公告)日：2021-09-09

申请号：US17025850

申请日：2020-09-18

Applicant: Samsung Display Co., Ltd.

Inventor： Taesung KIM ,  Yunjong YEO ,  Hyunmin CHO ,  Jihee SON ,  Sungsoon IM

IPC: C23C14/04 ,  H01L51/00

Abstract: A method of manufacturing a mask, includes forming an organic material layer on a mask substrate and patterning a hard mask on the organic material layer, etching the organic material layer to form a mask sheet including through holes, removing the hard mask on the mask sheet, forming a conductive material layer on the mask sheet, and etching the conductive material layer to form a conductive layer.

公开(公告)号：US20210074784A1

公开(公告)日：2021-03-11

申请号：US16953188

申请日：2020-11-19

Applicant: Samsung Display Co., Ltd.

Inventor： Sang Gab KIM ,  Hyunmin CHO ,  Taesung KIM ,  Subin BAE ,  Yu-Gwang JEONG ,  Jinseock KIM

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

Abstract: A method of manufacturing a display substrate may include the following steps: forming a drain electrode on a pixel area of a substrate; forming a pad electrode on a pad area of the substrate; forming an inorganic insulation layer that covers the drain electrode and the pad electrode; forming an organic insulation member that has a first thickness at the pixel area of the substrate, has a second thickness less than the first thickness at the pad area of the substrate, exposes a first portion of the inorganic insulation layer on the drain electrode, and exposes a second portion of the inorganic insulation layer on the pad electrode; removing the first portion of the inorganic insulation layer and the second portion of the inorganic insulation layer; and partially removing the organic insulation member.

公开(公告)号：US20200168684A1

公开(公告)日：2020-05-28

申请号：US16681697

申请日：2019-11-12

Applicant: Samsung Display Co., Ltd.

Inventor： Sang Gab KIM ,  Hyunmin CHO ,  Taesung KIM ,  Subin BAE ,  Yu-Gwang JEONG ,  Jinseock KIM

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: A method of manufacturing a display substrate may include the following steps: forming a drain electrode on a pixel area of a substrate; forming a pad electrode on a pad area of the substrate; forming an inorganic insulation layer that covers the drain electrode and the pad electrode; forming an organic insulation member that has a first thickness at the pixel area of the substrate, has a second thickness less than the first thickness at the pad area of the substrate, exposes a first portion of the inorganic insulation layer on the drain electrode, and exposes a second portion of the inorganic insulation layer on the pad electrode; removing the first portion of the inorganic insulation layer and the second portion of the inorganic insulation layer; and partially removing the organic insulation member.

公开(公告)号：US20250118571A1

公开(公告)日：2025-04-10

申请号：US18757975

申请日：2024-06-28

Applicant: Samsung Display Co., LTD.

Inventor： Changho YI ,  Sanggab KIM ,  Taesung KIM

IPC: H01L21/3213 ,  H01J37/32

Abstract: A plasma etching method reduces redeposition of by-products generated in a process of etching a copper layer. The plasma etching method includes performing a substrate arrangement operation including arranging a substrate including a conductive layer including copper on a mounting portion in a chamber of a plasma etching apparatus, performing a first preliminary etching operation including supplying a first etching gas including a chlorine element into the chamber and applying a first bias voltage to a lower electrode arranged below the substrate, and performing a first etching operation including supplying a second etching gas including a hydrogen element into the chamber and applying a second bias voltage to the lower electrode, wherein the first bias voltage is less than the second bias voltage.

公开(公告)号：US20230167538A1

公开(公告)日：2023-06-01

申请号：US18160155

申请日：2023-01-26

Applicant: Samsung Display Co., LTD.

Inventor： Taesung KIM ,  Yunjong YEO ,  Hyunmin CHO ,  Jihee SON ,  Sungsoon IM

IPC: C23C14/04 ,  H10K71/16

CPC classification number: C23C14/042 ,  H10K71/166 ,  H10K59/12

Abstract: A method of manufacturing a mask, includes forming an organic material layer on a mask substrate and patterning a hard mask on the organic material layer, etching the organic material layer to form a mask sheet including through holes, removing the hard mask on the mask sheet, forming a conductive material layer on the mask sheet, and etching the conductive material layer to form a conductive layer.